Taeyon (TY) Oh

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Taeyon (TY) Oh, Ph.D. is a senior semiconductor process and integration engineer at Coventor@Lam Research. In this position, he is responsible for semiconductor process integration & device simulation activities for DRAM, NAND and other device technologies. Prior to working at Coventor, Oh worked as a DRAM Senior Engineer (Manager) at Samsung Electronics, where he developed advanced DRAM manufacturing processes, performed failure analysis and assisted in yield improvement activities. Dr. Oh received his Ph.D. in Electrical and Electronic Engineering from Korea University, where he studied the design and fabrication of flexible electronic devices.

Author's Latest Posts

Virtual Exploration Of Novel Vertical DRAM Architectures
By Taeyon (TY) Oh - 20 Jun, 2024 - Comments: 0

In this article, we demonstrate a pathfinding technique for a novel Vertical DRAM technology. First, we identify important process parameters (defined by current semiconductor production equipment capabilities) that strongly impact yield. By using a virtual model, we then perform experimental optimization of the Vertical DRAM device across specific target ranges, to help predict and improve the... » read more

Improving DRAM Device Performance Through Saddle Fin Process Optimization
By Taeyon (TY) Oh - 15 Jun, 2023 - Comments: 0

As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

The Effect Of Pattern Loading On BEOL Yield And Reliability During Chemical Mechanical Planarization
By Taeyon (TY) Oh - 20 Jan, 2022 - Comments: 0

Chemical mechanical planarization (CMP) is required during semiconductor processing of many memory and logic devices. CMP is used to create planar surfaces and achieve uniform layer thickness during semiconductor manufacturing, and to optimize the device topology prior to the next processing step. Unfortunately, the surface of a semiconductor device is not uniform after CMP, due to different re... » read more

Identifying DRAM Failures Caused By Leakage Current And Parasitic Capacitance
By Taeyon (TY) Oh - 03 Feb, 2020 - Comments: 0

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even when there are no obvious structural abnormalities in the underlying device. Leakage current has become a critically important component in DRAM device design. Fig. 1 (a) DRAM Memory Cell, (b) GI... » read more

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