Tobias Bjerregaard

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Tobias Bjerregaard, founder and CEO of Teklatech A/S, has spent more than a decade with a focus on leading-edge micro-electronics and has invented and patented several semiconductor technological innovations in the areas of power integrity and clock distribution networks. He holds MS.EE. and Ph.D. degrees in micro-electronics.

Author's Latest Posts

10nm And 7nm Routability – How Is Your CAD Flow Doing?

By Tobias Bjerregaard - 09 Mar, 2017 - Comments: 0

At DesignCon in January, I was a panelist at a panel session entitled “Power Integrity For 10nm/7nm SoCs - Overcoming Physical Design Challenges And TAT.” I was on the panel together with Arvind Vel, Sr. Director Applications Engineering, ANSYS, Inc. and Ruggero Castagnetti, Distinguished Engineer, Broadcom Limited. This topic is of course extremely broad, but it was interesting getting fee... » read more

Dynamic Peak Power As A Proxy For DVD? Really?

By Tobias Bjerregaard - 08 Dec, 2016 - Comments: 0

Dynamic-voltage-drop (DVD) concerns have grown substantially at the 10nm and 7nm silicon process nodes. DVD refers to the transient voltage drop that a local power grid on a chip might experience if there is a rapid change in current. That drop can act like a “stall,” hurting performance until the grid recovers. Beefing up the power grid metal might seem to be the obvious fix, but, at th... » read more

Hitting The Power Integrity Wall At 10nm

By Tobias Bjerregaard - 08 Sep, 2016 - Comments: 0

At 10nm and beyond, the breakdown of some historic trends tied to Moore's Law is making it harder to fully harvest the benefits of scaling semiconductor technologies. Underlying the power, performance and area benefits of scaling are technological challenges that must be solved in order to make the semiconductor products a profitable business. Power-related challenges are among the most pres... » read more

Power Integrity Optimization Cuts RF Substrate Noise

By Tobias Bjerregaard - 14 Apr, 2016 - Comments: 0

Our main focus is on dynamic voltage drop at 16-14-10nm and beyond, but the rise of the Internet of Things (IoT) prompted me to share some silicon measurement results that are relevant to the RF design community. Normally, power integrity (PI) is looked at in the time domain, but in this work we looked at it from a frequency spectrum perspective. Silicon measurements prove how shaping the dynam... » read more