Johnny Dai

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Johnny Dai is a principal characterization scientist at Onto Innovation. He has been with Onto Innovation, previously Rudolph Technologies, for more than 15 years, and he holds a Ph.D. in Applied Physics from Fudan University.

Author's Latest Posts

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology

By Johnny Dai - 10 Oct, 2023 - Comments: 0

By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

Paving The Way For 5G: RF Filter Process Monitoring And Control Using Picosecond Ultrasonic Metrology

By Johnny Dai - 10 May, 2022 - Comments: 0

A recent study shows the radio frequency (RF) filter market growing steadily by nearly $16 billion from 2019 to 2024 at a compound annual growth rate (CAGR) of approximately 20%, according to Technavio. The strong growth in the RF filter market is driven by the increased adoption of 5G technology, the surge in smartphones using 5G, and commercial and consumer devices dependent on internet of th... » read more

The 5G Rollout: Solving Advanced RF Metrology Challenges

By Johnny Dai - 07 Dec, 2021 - Comments: 0

The global radio frequency (RF) semiconductor market size is growing rapidly at a compound annual growth rate of 8.5%, with an expected increase from $17.4 billion in 2020 to $26.2 billion in 2025, according to Research and Markets [1]. As many are aware, the rollout of 5G technology and the Internet of Things (IoT), which is enabled by 5G, are the main driving forces for this growth. Growth... » read more