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Katherine Derbyshire

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Katherine Derbyshire is a technical editor at Semiconductor Engineering.

Author's Latest Posts

Litho Challenges Break The Design-Process Wall
By Katherine Derbyshire - 22 Jun, 2015 - Comments: 3

The days when chip designers could throw tape “over the wall” to the manufacturing side are long gone. Over the last several technology generations, increasingly restrictive process kits have forced designers to accommodate their circuit structures to the manufacturing process. Lacking a successor to 193nm lithography, the industry has turned to increasingly complex resolution enhancemen... » read more

Can Copper Revolutionize Interconnects Again?
By Katherine Derbyshire - 10 Jun, 2015 - Comments: 2

Electromigration and resistivity present serious obstacles to interconnect scaling, as previously discussed. In a copper damascene process, grain growth is constrained by the narrow trenches into which copper is deposited. As the grain size approaches the mean free path of electrons in copper, electron scattering at sidewalls and grain boundaries increases and resistivity jumps. Meanwhile, incr... » read more

The End Of Silicon?
By Katherine Derbyshire - 04 May, 2015 - Comments: 1

As transistors shrink, not all device parameters scale at the same rate—and therein lies a potentially huge problem. In recent years, manufacturers have been able to reduce equivalent oxide thickness (EOT) more quickly than operating voltage. As a result, the electric field present in the channel and gate dielectric has been increasing. Moreover, EOT reduction is achieved in part by reduci... » read more

One-On-One: Dark Possibilities
By Katherine Derbyshire - 29 Apr, 2015 - Comments: 0

Professor Michael Taylor’s research group at UC San Diego is studying ways to exploit dark silicon to optimize circuit designs for energy efficiency. He spoke with Semiconductor Engineering about the post-Dennard scaling regime, energy efficiency from integrated circuits all the way up to data centers, and how the manufacturing side can help. What follows are excerpts of that conversation. (P... » read more

Sponges, Skyscrapers, And Low-K
By Katherine Derbyshire - 20 Apr, 2015 - Comments: 1

A sponge is a porous structure. So is a skyscraper. These two very different images exemplify the materials being considered for advanced low dielectric constant (κ) materials. Most porous dielectrics that have been tested up to this point resemble sponges. As Intel’s David Michalak explained at this month's Materials Research Society (MRS) Spring Meeting, these materials consist of a ba... » read more

One-On-One: Dark Servers
By Katherine Derbyshire - 14 Apr, 2015 - Comments: 1

Professor Michael Taylor’s research group at UC San Diego is studying ways to exploit dark silicon to optimize circuit designs for energy efficiency. He spoke with Semiconductor Engineering about the post-Dennard scaling regime, energy efficiency from integrated circuits all the way up to data centers, and how the manufacturing side can help. What follows are excerpts of that conversation. To... » read more

One-On-One: Dark Silicon
By Katherine Derbyshire - 09 Apr, 2015 - Comments: 0

Professor Michael Taylor’s research group at UC San Diego is studying ways to exploit dark silicon to optimize circuit designs for energy efficiency. He spoke with Semiconductor Engineering about the post-Dennard scaling regime, energy efficiency from integrated circuits all the way up to data centers, and how the manufacturing side can help. What follows are excerpts of that conversation. (F... » read more

DSA Defects Continue Downward Trend
By Katherine Derbyshire - 06 Apr, 2015 - Comments: 0

As previously discussed, the majority of defects in early directed self-assembly (DSA) processes were due to particles and other contaminants, and could be attributed to the immaturity of the process and materials. As manufacturers consider whether to incorporate DSA into specific technology nodes, they need to assure themselves that production-worthy yields can be achieved. Recent research at ... » read more

How To Deal With Electromigration
By Katherine Derbyshire - 02 Mar, 2015 - Comments: 8

The replacement of aluminum with copper interconnect wiring, first demonstrated by IBM in 1997, brought the integrated circuit industry substantial improvements in both resistance to electromigration and line conductivity. Copper is both a better and more stable conductor than aluminum. Difficult though the transition was, it helped extend device scaling for another eighteen years (and counting... » read more

Tighter CD Requires Tighter Laser Bandwidth
By Katherine Derbyshire - 24 Feb, 2015 - Comments: 0

Concerns that the bandwidth of the light source for optical lithography can affect pattern quality are not new. No lens material is completely free from chromatic aberration: the refractive index varies with wavelength, and so different wavelengths will focus at different points. Chromatic aberration became a much less serious concern with the replacement of broadband mercury lamps with lase... » read more

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