Author's Latest Posts


Advancements in Corona Noncontact Metrology Tools, CnCV, for Industrial WBG Wafer Testing and Electrical Defect Related Yield Prediction


In this review we discuss two recent CnCV metrology advancements, namely: 1. enhancement of throughput and 2. use of electrical defect mapping for yield prediction. Novel 10x faster measurements of critical WBG semiconductor electrical parameters are based on the discovery of a linear UV radiation induced electrical charge biasing.  Example results for an AlGaN/GaN HEMT structure illus... » read more

Advanced Metrology for Backside Metallization Using Picosecond Laser Ultrasonics


Picosecond Ultrasonics (PULSE) Technology has emerged as a leading metrology solution for characterizing single-layer and multilayer metal films in advanced semiconductor manufacturing [1]. As a non-contact, non-destructive technique, PULSE Technology has become the tool-of-record across multiple device segments, including logic, radio frequency (RF), memory, microelectromechanical systems (MEM... » read more

Mid-infrared Ellipsometry For Optical Critical Dimension Metrology


Abstract "Mid-infrared ellipsometry offers a powerful approach for non-destructive optical critical dimension (OCD) metrology in advanced semiconductor manufacturing. This technique supports in-line measurements of high aspect ratio structures, such as those found in 3D NAND memory devices. The incorporation of quantum cascade lasers and fast phase modulation allows rapid acquisition of Muel... » read more

CD Step Application in Edge Air Layer Structure Measurement for Bulk Acoustic Resonator


A vital component of modern communication systems, bulk acoustic wave resonators (BAW) function as filters, oscillators, and sensors. In a BAW device, the acoustic waves are confined within a specific region to achieve efficient resonance. The air ring structure, including the edge air layer structure, prevents acoustic energy from leaking. However, measuring the critical dimensions (CD) of edg... » read more

Picosecond Ultrasonics: An Advanced Technology Utilized for Process Control of SiCr Thin Film Resistors


The bipolar-CMOS-DMOS (BCD) process is an advanced semiconductor technology integrating bipolar, CMOS, and DMOS devices onto a single chip, providing a compact, high-performance platform for the integration of analog, digital, and power circuitry. Thin-film resistors are employed to ensure precise resistance values and minimal temperature coefficients (TCR), thereby delivering enhanced accuracy... » read more

Early Zone Correction for Enhanced Overlay Precision in Next-Generation FOPLP Lithography


AI chiplet architectures are driving advanced IC substrates (AICS) toward larger panels, finer line/space, and much tighter overlay budgets. This study presents a lithography strategy that combines ultra-large exposure field and fine-resolution imaging with algorithmic early zone correction (EZC) to reduce alignment-solution errors, the largest item in the lithography overlay budget. In this st... » read more

Enhancing CMP Process Control with Intelligent Line Monitoring & Integrated Metrology


New logic transistor designs, 3D NAND stacking, and DRAM integration introduce more CMP layers and tighter process windows. Traditional metrology approaches struggle to keep pace, especially with the need for high sampling rates, multiple control zones, and improved signal-to-noise ratios. Onto Innovation’s Intelligent Line Monitoring & Control with Integrated Metrology offers a new appro... » read more

Through The Glass: Why The Rapid Development Of TGV Demands Rigorous Analysis


The drive for increased performance is enticing some advanced packaging manufacturers to transition from traditional organic substrates to glass core substrates, a switch that comes with numerous benefits. Compared to organic substrates, glass core offers superior mechanical strength, is better suited for large package sizes, provides improved electrical properties, and has the ability to meet ... » read more

Enabling In-Line Process Control for Hybrid Bonding Applications


As demand grows for high-performance computing (HPC) and AI-driven applications, manufacturers are turning to hybrid bonding to enable the ultra-dense 3D integration required for next-generation chip architectures. This advanced packaging technology presents significant process challenges. Surface preparation must be precisely controlled to eliminate particles, excess recess, and copper pad ... » read more

Non-Destructive Measurement of Bottom Width in Deep Trench Isolation Structures using IRCD Metrology


As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in... » read more

← Older posts