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How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Integrating Process Models With TCAD Simulation…


Novel semiconductor technologies are creating complex process flows, which are needed to support the manufacturing of advanced 3D semiconductor structures. It can be helpful to model process flows, and their effect on a novel device, prior to physical fabrication. Process modeling is a technique that can predict the 3D structure of a device using an understanding of unit process steps. Durin... » read more