Timothy Yang

  (all posts)
Timothy Yang is a senior semiconductor process & integration engineer in the Semiverse Solutions group at Lam Research. Prior to his work at Lam, Yang worked at Tokyo Electron developing etch schemes, post lithography pattern improvement techniques, process flow control for SADP and SAQP patterning applications, and EUV and immersion lithography photoresist technology. Yang received his B.S. degree in physics from UCLA, an M.S. degree in Material Science from the Chiba Institute of Technology, and a Ph.D. degree in Material Science from Tohoku University.

Author's Latest Posts

Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching
By Timothy Yang - 22 May, 2025 - Comments: 1

Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure dose can reduce LER/LWR, but it also decreases wafer throughput, which is highly undesirable given the EUV tool’s high operating costs. Ion beam etching (IBE) can directionally etch away roug... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines
By Timothy Yang - 20 Apr, 2023 - Comments: 0

Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

Using Process Modeling To Enhance Device Uniformity During Self-Aligned Quadruple Patterning
By Timothy Yang - 18 Nov, 2021 - Comments: 0

Despite the growing interest in EUV lithography, self-aligned quadruple patterning (SAQP) still holds many technical advantages in pattern consistency, simplicity, and cost. This is particularly true for very simple and periodic patterns, such as line & space patterns or hole arrays. The biggest challenge of SAQP is the inherently asymmetric mask shape. This asymmetry can create structural ... » read more

Accelerating Dry Etch Processes During Feature Dependent Etch
By Timothy Yang - 23 Nov, 2020 - Comments: 0

In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results, since the etch rate at any point on the wafer will vary depending on the solid angle visible to the bulk chamber and the ion flux for that angular range. These non-uniform and feature dependent e... » read more

Creating Higher Density 3D NAND Structures
By Timothy Yang - 21 Feb, 2019 - Comments: 0

3D NAND flash memory has enabled a new generation of non-volatile solid-state storage useful in nearly every electronic device imaginable. 3D NAND can achieve data densities exceeding those of 2D NAND structures, even when fabricated on later generation technology nodes. The methods used to increase storage capacity come with potentially significant tradeoffs in memory storage, structural sta... » read more

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