Zhihui Yuan

(all posts)
Zhihui Yuan heads the technical marketing team of industry power discrete at Infineon. He is responsible for IGBT and SiC in discrete package for industry applications. He received a B.sc in electrical engineering in 2004 from Harbin Institute of Technology, M.sc in 2006 from Chalmers University of Technology, and PhD in 2010 from Delft University of Technology.

Author's Latest Posts

Short-Circuit Ruggedness In SiC MOSFETs

By Zhihui Yuan - 13 Sep, 2021 - Comments: 1

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more