Benjamin Vincent

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Benjamin Vincent is is the European Manager of the semiconductor process and integration (SPI) team at Coventor. He has 10+ years of experience in semiconductor process engineering, including a position at imec (Belgium) from 2008 to 2012 as an epitaxy scientist in the advanced logic area. In 2013, he joined Intel in Santa Clara, CA, working on the development and launch of the first Intel Si photonics products (100G optical transceivers). Vincent joined Coventor in July 2017, and is currently working for Coventor’s SPI group in Europe performing semiconductor process development and applications engineering. He received his MS Physics and Ph.D. in Material Science from the Institut Polytechnique de Grenoble, in Grenoble, France.

Author's Latest Posts

Overcoming Challenges In Next-Generation SRAM Cell Architectures
By Benjamin Vincent - 18 Mar, 2021 - Comments: 0

Static Random-Access Memory (SRAM) has been a key element for logic circuitry since the early age of the semiconductor industry. The SRAM cell usually consists of six transistors connected to each other in order to perform logic storage and other functions. The size of the 6T (6 Transistors) SRAM cell has shrunk steadily over the past decades, thanks to Moore’s Law and the size reduction of t... » read more

Introducing Nanosheets Into Complementary-Field Effect Transistors (CFETs)
By Benjamin Vincent - 01 Jun, 2020 - Comments: 0

In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D) to benchmark different process integration options for Complementary-FET (CFET) fabrication. CFET is a CMOS architecture that was proposed by imec in 2018 [2]. This architecture contains p- and n-MOSFET structures built on top of each other, instead of having them located side-by-side. In our previous blog, we r... » read more

The Impact Of EUV Resist Thickness On Via Patterning Uniformity
By Benjamin Vincent - 30 Mar, 2020 - Comments: 0

Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

A Study Of Next-Generation CFET Process Integration Options
By Benjamin Vincent - 21 Nov, 2019 - Comments: 0

Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more

Controlling Variability Using Semiconductor Process Window Optimization
By Benjamin Vincent - 01 Jul, 2019 - Comments: 0

To ensure success in semiconductor technology development, process engineers must set the allowed ranges for wafer process parameters. Variability must be controlled, so that final fabricated devices meet required specifications. These specifications include critical dimensions, electrical performance requirements, and other device characteristics. Pre-production or ramp-up production Si wa... » read more

Improving SAQP Patterning Yield Using Virtual Fabrication And Advanced Process Control
By Benjamin Vincent - 25 Mar, 2019 - Comments: 0

Advanced logic scaling has created some difficult technical challenges, including a requirement for highly dense patterning. Imec recently confronted this challenge, by working toward the use of Metal 2 (M2) line patterning with a 16 nm half-pitch for their 7nm node (equivalent to a 5nm foundry node). Self-Aligned Quadruple Patterning (SAQP) was investigated as an alternative path to Extreme Ul... » read more

Practical Methods To Overcome The Challenges Of 3D Logic Design
By Benjamin Vincent - 25 Jun, 2018 - Comments: 0

What should you do If you don’t have enough room on your floor to store all your old boxes? Luckily, we live in a 3D world, and you can start stacking them on top of each other. The Challenge: How can we shrink logic devices? Logic designers are currently facing even bigger challenges than you might be having in tidying up your storage area. Not only are logic cells highly packed together... » read more

Improving Patterning Yield At The 5nm Semiconductor Node
By Benjamin Vincent - 29 Mar, 2018 - Comments: 0

Engineering decisions are always data-driven. As scientists, we only believe in facts and not in intuition or feelings. At the manufacturing stage, the semiconductor industry is eager to provide data and facts to engineers based upon metrics such as the quantity of wafers produced per hour and sites/devices tested on each of those wafers. The massive quantity of data generated in semiconduct... » read more

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