Author's Latest Posts


Process Model Precision: Calibrating For Accurate Predictions Of FinFET Device Profiles


In modern semiconductor process integration, rapid and well-informed path finding is essential for on-time product release. Virtual Design of Engineering (DOE) and predictive modeling can expose integration risks early; however, their value depends on accurate process models calibrated to real fab behavior.1 Reliable prediction requires strong correlations between model inputs and measurable... » read more

Why 3D NAND Layers Bend (And How To Prevent It)


3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D NAND devices is tier bending and tier collapse. These undesirable conditions can be caused by a combination of factors. Using the virtual Design of Experiment (DOE) capabilities in SEMulator... » read more

Developing ReRAM As Next Generation On-Chip Memory For Machine Learning, Image Processing And Other Advanced CPU Applications


In modern CPU device operation, 80% to 90% of energy consumption and timing delays are caused by the movement of data between the CPU and off-chip memory. To alleviate this performance concern, designers are adding additional on-chip memory to their CPUs. Traditionally, SRAM has been the most widely used on-chip CPU memory type. Unfortunately, SRAM is currently limited to a size of hundreds of ... » read more

3D NAND Virtual Process Troubleshooting And Investigation


Modern semiconductor processes are extremely complicated and involve thousands of interacting individual process steps. During the development of these process steps, roadblocks and barriers are often encountered in the form of unanticipated negative interactions between upstream and downstream process modules. These barriers can create a long delay in the development cycle and increase costs. ... » read more