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Research Bits: July 7


3D NAND PUF Researchers from Seoul National University developed a new hardware security technology based on commercially available 3D NAND flash memory. The approach is an adaptation of physical unclonable functions (PUFs) with the ability to hide a security key under user data when not in use and reveal it only when needed. The same memory space used for storing security keys can be repurpos... » read more

Blog Review: July 2


Synopsys’ Shankar Krishnamoorthy chats with industry experts about how the combination of AI and software-defined systems is driving a re-evaluation of engineering workflows and why chip, software, and system development must evolve in unison. Siemens’ Jake Wiltgen considers the rapidly evolving and growing challenge of performing DFT verification as designs scale, with complex hierarchi... » read more

Research Bits: July 1


Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

Blog Review: June 25


Siemens’ John McMillan provides a detailed overview of 3D-IC technology and heterogeneous integration, from the market trends driving its adoption to the design, verification, and manufacturing challenges involved. Synopsys’ Gunnar Braun and Stewart Williams check out how cloud-based development practices and virtual prototypes can enable earlier and more efficient testing and validation... » read more

Research Bits: June 24


In-sensor visual processing Researchers from the University of Massachusetts Amherst created silicon-based in-sensor visual processing arrays that can both capture and process visual data in the analog domain to reduce the latency between sensing and identification. The team created two integrated arrays of gate-tunable silicon photodetectors that share bipolar analog output and low-power o... » read more

Blog Review: June 18


Synopsys’ John Koeter and other industry experts discuss whether high-bandwidth memory should follow established standards for broad compatibility and scalability or be customized to address specific use case requirements and time-to-market targets. In a podcast, Siemens’ Conor Peick, Dale Tutt, and Mike Ellow chat about how progress in 3D-IC development, thermal management, and the indu... » read more

Research Bits: June 17


Superlattice castellated FETs Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride (GaN) that could lead to improved radio frequency device performance, crucial for enabling 6G devices. “We have piloted a device technology, working with collaborators, called superlattice castellated field effect transistors (SLCFETs),... » read more

Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

Blog Review: June 4


In a podcast, Siemens’ Conor Peick, Dale Tutt, and Mike Ellow chat about the implications of the software-defined transition, how it affects semiconductor development, and why it seems to be leading more companies towards developing their own silicon. Cadence’s Vinod Khera shows off a Linux-based audio development platform for prototyping AI audio applications with support for real-time ... » read more

Research Bits: June 3


Imaging power electronics Researchers from the Institute of Science Tokyo, Harvard University, and Hitachi used diamond quantum sensors to analyze the magnetization response of soft magnetic materials used in power electronics. The method can simultaneously image both the amplitude and phase of AC stray fields over a wide frequency range up to 2.3 MHz. It uses a diamond quantum sensor with ... » read more

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