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Jesse Allen

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Jesse Allen is the Knowledge Center administrator and a senior editor at Semiconductor Engineering.

Author's Latest Posts

Blog Review: Dec. 20
By Jesse Allen - 20 Dec, 2023 - Comments: 0

Siemens' Huw Geddes finds that the flexibility offered by the RISC-V ISA can introduce further verification and validation requirements to ensure that the combination of extensions and customization not just works but does not break anything else while delivering expected performance, plus looks at how processor trace can help. Cadence's Gustavo Araujo explains the various optimizations in t... » read more

Research Bits: Dec. 18
By Jesse Allen - 18 Dec, 2023 - Comments: 0

Stacking 2D layers for AI processing Researchers from Washington University in St. Louis, MIT, Yonsei University, Inha University, Georgia Institute of Technology, and the University of Notre Dame demonstrated monolithic 3D integration of layered 2D material, creating a novel AI processing hardware that integrates sensing, signal processing, and AI computing functions into a single chip. Th... » read more

Blog Review: December 13
By Jesse Allen - 13 Dec, 2023 - Comments: 0

Synopsys' Charles Dittmer discusses key and emerging use cases for Bluetooth Low Energy and how combining BLE with other wireless protocols can open new avenues of functionality for application areas including automotive, hearables, and retail. Cadence's Neelabh Singh points out changes in the terminologies describing USB4 links and shows the various possible link configurations put forth by... » read more

Research Bits: December 11
By Jesse Allen - 11 Dec, 2023 - Comments: 0

Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Startup Funding: November 2023
By Jesse Allen - 06 Dec, 2023 - Comments: 0

November was a banner month for quantum computing startups, with two raising rounds of $100 million for their superconducting and silicon spin qubit technology. Another significant round went to a company developing photonic-based systems. Several other companies drew funding, including one applying quantum sensors to semiconductor inspection. Sizeable funding also went to an autonomous tran... » read more

Blog Review: Dec. 6
By Jesse Allen - 06 Dec, 2023 - Comments: 0

Cadence's Vinod Khera checks out potential implications of generative AI for EDA, including how it could increase the learning rate of students and reduce the rising verification cost. Synopsys' Kiran Vittal considers the driving factors behind RISC-V's growth and why it is becoming increasingly important for applications ranging from automotive to 5G mobile, AI, and data centers. Siemens... » read more

Research Bits: December 5
By Jesse Allen - 05 Dec, 2023 - Comments: 0

Neuromorphic nanowires Researchers from UCLA and University of Sydney built an experimental computing system physically modeled after the biological brain. The device is composed of a tangled-up network of wires containing silver and selenium that were allowed to self-organize into a network of entangled nanowires on top of an array of 16 electrodes. The nanowire network physically reconfigure... » read more

Blog Review: November 29
By Jesse Allen - 29 Nov, 2023 - Comments: 0

Siemens' Matt Walsh checks out electro-thermal design and how a Boundary Condition Independent Reduced Order Model (BCI-ROM) can capture accurate characteristics from a 3D thermal analysis, ready for use in a 1D circuit simulation. Cadence's Vinod Khera considers how EDA could benefit from the AI revolution by providing a productivity boost through virtual assistants and improving code quali... » read more

Research Bits: Nov. 28
By Jesse Allen - 28 Nov, 2023 - Comments: 0

Switchable photodetector and neuromorphic vision sensor Researchers from the Institute of Metal Research at the Chinese Academy of Sciences built a device that can be switched between being a photodetector and neuromorphic vision sensor by adjusting the operating voltage. The trench-bridged GaN/Ga2O3/GaN heterojunction array device exhibits volatile and non-volatile photocurrents at low and hi... » read more

Research Bits: November 21
By Jesse Allen - 21 Nov, 2023 - Comments: 0

MoS2 in-memory processor Researchers from École Polytechnique Fédérale de Lausanne (EPFL) developed a large-scale in-memory processor using the 2D semiconductor material, molybdenum disulfide (MoS2), for the channel material in the more than 1,000 transistors that comprise the processor. The MoS2-based in-memory processor is dedicated to vector-matrix multiplication, key for digital signal ... » read more

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