Author's Latest Posts


Power/Performance Bits: Jan. 21


Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

Week In Review: Design, Low Power


Inphi Corporation and Synopsys finalized the acquisition of eSilicon. Synopsys acquired certain IP assets from eSilicon, including TCAMs and multi-port memory compilers, as well as its Interface IP portfolio with High-Bandwidth Interface (HBI) IP and a team of R&D engineers; it did not disclose terms of the deal. Inphi Corporation bought the rest of the company for approximately $216 millio... » read more

Blog Review: Jan. 15


Cadence's Paul McLellan looks back at the history of lithography, from its fundamental equation to multiple patterning and the challenges facing EUV today. Synopsys' Taylor Armerding warns that medical device security isn't keeping up with new threats, despite positive steps, due in part to lack of funding, delayed initiatives, and a focus on critical service delivery. In a video, Mentor'... » read more

Power/Performance Bits: Jan. 13


Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Week In Review: Design, Low Power


Synopsys will acquire certain IP assets of INVECAS. The acquisition expands Synopsys' DesignWare Logic Library, General Purpose I/O, Embedded Memory, Interface and Analog IP portfolio. The acquisition will also add a team of experienced R&D engineers to focus on physical IP across a range of process technologies. INVECAS will retain its HDMI IP and ASIC Design Solutions businesses. The deal... » read more

Blog Review: Jan. 8


Synopsys' Taylor Armerding digs into the privacy and security concerns surrounding connected toys and argues that the current practice of consumers bearing much of the burden to determine what is safe is not viable. In a podcast, Mentor's John McMillan looks back at the past decade in technology and what the next may hold in store as areas like AI and automotive get going. Cadence's Madha... » read more

Power/Performance Bits: Jan. 7


Ferroelectric FET Researchers at Purdue University developed a ferroelectric transistor capable of both processing and storing information. The ferroelectric semiconductor field-effect transistor is made of alpha indium selenide, which overcomes the problem of ferroelectric materials not interfacing well with silicon. “We used a semiconductor that has ferroelectric properties. This way tw... » read more

Week In Review: Design, Low Power


Apple and Imagination inked a new multi-year license agreement under which Apple has access to a wider range of Imagination’s intellectual property in exchange for license fees. In 2017, Apple had announced it would be developing its own graphics chips and phasing out use of Imagination's IP. Imagination, which had recently restructured, saw its stock price fall by half in the wake of the new... » read more

Power/Performance Bits: Dec. 31


Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

Power/Performance Bits: Dec. 23


High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more

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