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Katherine Derbyshire

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Katherine Derbyshire is a technical editor at Semiconductor Engineering.

Author's Latest Posts

Keeping EUV Cool
By Katherine Derbyshire - 19 Sep, 2013 - Comments: 1

It’s been clear for a long time that EUV lithography sources will be fairly inefficient. The laser-produced plasma (LPP) source concept involves heating a droplet of metallic tin with a high-powered laser to produce a plasma. Only a fraction of the energy of the laser will be converted to light, rather than heat, and less than 1% of the light emitted by the plasma will be at EUV wavelengths. ... » read more

Psst…Check This Out
By Katherine Derbyshire - 15 Aug, 2013 - Comments: 0

By Katherine Derbyshire It’s hard to tell when the semiconductor industry actually changes over from one technology node to the next. Process technology is among the most closely guarded of fab secrets, and things like product sales numbers aren’t far behind. There are indirect measures, though. For example, the same device with a smaller feature size will have a smaller die size, and... » read more

3D Integration
By Katherine Derbyshire - 23 Apr, 2013 - Comments: 0

By Katherine Derbyshire It’s a central problem of integrated circuit scaling. While transistor delay goes down along with channel length, interconnect delay goes up. The 90 nm technology node featured a transistor delay of about 1.6 ps, while a 1 mm long interconnect wire added about 5x102 ps. For the 22 nm node, the ITRS estimates transistor delay at 0.4 ps, but interconnect delay at abou... » read more

There’s More To EUV Than Source Power
By Katherine Derbyshire - 20 Sep, 2012 - Comments: 0

By Katherine Derbyshire For some time now, most industry coverage of EUV lithography has focused on the light source. As my colleagues have pointed out, source power limitations impose major constraints on not only potential EUV-based device manufacturing, but even on development of sub-20nm devices and process technologies. When throughput is in the neighborhood of four wafers per hour, lear... » read more

EUV glass still less than half full, but level is rising
By Katherine Derbyshire - 30 Mar, 2012 - Comments: 0

EUV first drew the semiconductor industry’s attention in the late 1990s, as lithographers began to consider the “post-optical” future. At that time, the future was expected to arrive with the 100-nm technology node, by 2004. ArF lithography turned out to be far more extensible than anticipated, though, and is still going strong fifteen years later. Which is fortunate given that, as we now... » read more

Non-visual defect inspection gives fabs better eyes, new insights
By Katherine Derbyshire - 11 Oct, 2011 - Comments: 0

For a long time, semiconductor defect inspection focused on particles, and particle defects remain an important cause of yield loss. But as devices have become more complex, additional kinds of defects have drawn the attention of process engineers. Bridging, pattern collapse, and other resist defects have become particularly important in the sub-100 nm era. The introduction of CMP brought abras... » read more

For want of an o-ring, the mask was lost
By Katherine Derbyshire - 25 Jul, 2011 - Comments: 0

O-ring seals are everywhere in a typical semiconductor fab. Any piece of vacuum equipment uses several of them to seal the openings where components of the process chamber fit together. Yet, as ubiquitous as they are, most process engineers don’t think about them very much. They buy the seal specified by the equipment vendor, from the supplier with the most attractive price, and pretty much l... » read more

Waiting for Porous Low-k
By Katherine Derbyshire - 12 May, 2011 - Comments: 0

I'm working on a longer article on low-k dielectric integration, but in the meantime I wanted to pass along an observation from Joubert Olivier of LTM-CNRS, in his presentation at the Materials Research Society Spring Meeting. Asked about the prospects for low-k integration, he reminded the audience that even if an integration scheme is able to achieve good selectivity between the hard mask ... » read more

Laser pulses illuminate downturn and recovery
By Katherine Derbyshire - 25 Mar, 2011 - Comments: 0

[caption id="attachment_7313" align="alignnone" width="728"] Laser pulses per month for Gigaphoton's KrF and ArF lasers[/caption] I thought this image was a nice illustration of exactly what happened in the most recent industry downturn. The graphic shows the number of pulses per laser, per month, for Gigaphoton's installed base of ArF and KrF lasers. A stepper processing 1,000 wafers per mo... » read more

How do PV and IC silicon markets compare?
By Katherine Derbyshire - 14 Feb, 2011 - Comments: 0

The recent announcement of 2010 silicon wafer shipments got me wondering: silicon consumption for solar cells passed silicon consumption for integrated circuits a number of years ago, but how do they compare now? A quick call to the very helpful Richard Winegarner at Sage Concepts answered the question. In 2009, solar cells consumed 10 times as many square inches, but generated about the same t... » read more

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