Key Technologies To Extend EUV To 14 Angstroms


The top three foundries plan to implement high-NA EUV lithography as early as 2025 for the 18 angstrom generation, but the replacement of single exposure high-NA (0.55) over double patterning with standard EUV (NA = 0.33) depends on whether it provides better results at a reasonable cost per wafer. So far, 2024 has been a banner year for high-numerical aperture EUV lithography. Intel Foundry... » read more

Metal Oxide Resist (MOR) EUV Lithography Processes For DRAM Application


This paper reports the readiness of key EUV resist process technologies using Metal Oxide Resist (MOR) aiming for the DRAM application. For MOR, metal contamination reduction and CD uniformity (CDU) are the key performance requirements expected concerning post exposure bake (PEB). Based on years of experience with spin-on type Inpria MOR, we have designed a new PEB oven to achieve contamination... » read more