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Ann Mutschler

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Ann Mutschler is senior executive editor at Semiconductor Engineering.

Author's Latest Posts

Americans Are Concerned About Privacy, Security, But Will Still Adopt It
By Ann Mutschler - 08 Jan, 2015 - Comments: 0

As I wrote in my last blog post I have some concerns about the security and privacy aspects of some aspects of applications in the Internet of Things, and it seems I am not alone. According to NXP Semiconductors, which announced this week the findings of an IoT study it had Harris Poll conduct, 81% of respondents are concerned about their privacy and that this concern impacts their decision ... » read more

System Bits: Jan. 6
By Ann Mutschler - 06 Jan, 2015 - Comments: 1

Quantum channel of light In experiments using ultracold atoms and laser light, ETH researchers have measured a stepwise change in conductivity as the atoms pass through tiny structures. This is the first time that this quantum effect has been observed for electrically neutral particles. [caption id="attachment_16993" align="alignnone" width="300"] A point contact through which neutral, ultr... » read more

Power/Performance Bits: Jan. 6
By Ann Mutschler - 06 Jan, 2015 - Comments: 0

3D nanoshaping A team of researchers led by Purdue University report they’ve developed a method for creating large-area patterns of 3D nanoshapes from metal sheets. They believe this represents a potential manufacturing system to inexpensively mass produce innovations such as "plasmonic metamaterials" for advanced technologies, and could enable high-speed electronics, advanced sensors and so... » read more

System Bits: Dec. 30
By Ann Mutschler - 30 Dec, 2014 - Comments: 0

3D printing merges plastics, active electronics Princeton researchers have embedded tiny light-emitting diodes into a standard contact lens, allowing the device to project beams of colored light as part of a project demonstrating 3-D printing techniques. And while the lens is not designed for actual use — it requires an external power supply — the device was created to demonstrate the a... » read more

Power/Performance Bits: Dec. 30
By Ann Mutschler - 30 Dec, 2014 - Comments: 0

Crafting ultrathin color coatings Harvard University researchers have developed a technique that coats a metallic object with an extremely thin layer of semiconductor, just a few nanometers thick. And while the semiconductor is a steely gray color, the object ends up shining in vibrant hues because the coating exploits interference effects in the thin films. Carefully tuned in the laboratory, ... » read more

System Bits: Dec. 23
By Ann Mutschler - 23 Dec, 2014 - Comments: 0

Mini particle accelerator Researchers at MIT who succeeded last year in creating a material that could trap light and stop it in its tracks have now developed a more fundamental understanding of the process. The new work — which they said could help explain some basic physical mechanisms — shows that this behavior is connected to a wide range of other seemingly unrelated phenomena. Ligh... » read more

Is The Stacked Die Ecosystem Stagnating?
By Ann Mutschler - 23 Dec, 2014 - Comments: 0

While the stacked die ecosystem in general is currently status quo, with not much happening in the past year, there is definitely work being done —albeit cautiously—on the design tools side of things. It would be easy to feel impatient that the design tools are not complete and available today for [getkc id="82" comment="2.5D"] and [getkc id="42" comment="3D IC"] implementation until hearin... » read more

Power/Performance Bits: Dec. 23
By Ann Mutschler - 23 Dec, 2014 - Comments: 0

Glimpsing pathway of sunlight to electricity According to University of Oregon and Lund University researchers, four pulses of laser light on nanoparticle photocells in a University of Oregon spectroscopy experiment have opened a window on how captured sunlight can be converted into electricity. The work, which the researchers expect could inspire devices with improved efficiency in solar e... » read more

Is The Stacked Die Ecosystem Stagnating?
By Ann Mutschler - 18 Dec, 2014 - Comments: 2

It is now widely agreed that not much has been happening in terms of adoption for 2.5D interposer and 3D ICs. “It seems like everyone is still at the starting line waiting for the race to begin," said Javier DeLaCruz, senior director of engineering of [getentity id="22242" e_name="eSilicon"]. "Interposer assembly and IP availability for effectively using the [getkc id="82" comment="2.5D IC... » read more

Power/Performance Bits: Dec. 16
By Ann Mutschler - 16 Dec, 2014 - Comments: 0

Measuring electrons in silicon In what is believed to be a first, a team of physicists and chemists based at UC Berkeley, Ludwig-Maximilians Universität in Munich, Germany, the University of Tsukuba, Japan, and the Molecular Foundry at the Department of Energy’s Lawrence Berkeley National Laboratory has captured images of electrons breaking free of their atomic shells using attosecond pulse... » read more

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