Mary Ann White

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Mary Ann White is director of product marketing for the Galaxy Design Platform at Synopsys.

Author's Latest Posts

Functional Safety Implementation Goes Mainstream

By Mary Ann White - 24 Oct, 2019 - Comments: 0

Electronics engineers are being thrust into the automotive market like never before. The move to electrify automobiles, along with the advent of self-driving cars, means that silicon designers will be designing ever more sophisticated automotive ICs. But cars aren’t like most other electronic systems; it’s imperative that they cause no harm should they fail. This brings us to the realm o... » read more

For SoC ISO 26262 Compliance, Should All EDA Tools Be TCL1?

By Mary Ann White - 02 Nov, 2017 - Comments: 2

ISO 26262, the automotive functional safety standard, requires the assessment of software tool confidence levels (TCLs) as either a TCL1, TCL2 or TCL3. Part 8:2011, clause 11.4.5 of the ISO 26262 standard provides a methodology with guidance for software tool classification and qualification. It applies to software tools used for the development of safety-critical designs where it is essentia... » read more

Low Power Trends Toward FinFET

By Mary Ann White - 12 Feb, 2015 - Comments: 0

My previous blog, Power Reduction Techniques, covered which low power techniques were applicable for various process nodes, from larger planar CMOS process technologies through finFET. The 16 and 14nm finFET-based process nodes are moving into production this year, and we are seeing many companies rapidly move their designs to finFET. In my last post, I noted some of the reasons why finFET is s... » read more

Power Reduction Techniques

By Mary Ann White - 07 Aug, 2014 - Comments: 0

As 16nm and 14nm finFET process nodes come into production toward the end of this year, the performance (up to 30% vs. 28nm planar CMOS), power (~30%) and area (up to ~50%) benefits have been well documented. The same can be said for the 28nm FD-SOI process as it gains more traction in the marketplace touting similar performance and power improvements as those for FinFET when compared against i... » read more