Author's Latest Posts


Transistor-Level Performance Evaluation Based On Wafer-Level Process Modeling


Three years ago, I wrote a blog entitled “Linking Virtual Wafer Fabrication Modeling with Device-level TCAD Simulation,” in which I described the seamless connection between the SEMulator3D virtual wafer fabrication software platform and external third-party TCAD software. I’m now happy to report that device-level I-V performance analysis is now a built-in module within the SEMulator3D so... » read more

The Advantages Of FD-SOI Technology


If my memory serves me well, it was at the 1989 Device Research Conference where the potential merits of SOI (Silicon on Insulator) technology were discussed in a heated evening panel discussion. At that panel discussion, there were many advocates for SOI, as well as many naysayers. I didn’t really think more about SOI technology until the mid-nineties, when I was sitting in a meeting where t... » read more

Reducing BEOL Parasitic Capacitance Using Air Gaps


Reducing back-end-of-line (BEOL) interconnect parasitic capacitance remains a focus for advanced technology node development. Porous low-k dielectric materials have been used to achieve reduced capacitance, however, these materials remain fragile and prone to reliability concerns. More recently, air gap has been successfully incorporated into 14nm technology [1], and numerous schemes have b... » read more

What Drives SADP BEOL Variability?


Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are being used to meet the stringent patterning demands of advanced back-end-of-line (BEOL) technologies. For the 7nm technology node, patterning requirements include a metal pitch of 40nm or less. This ... » read more