Author's Latest Posts


A Review of Silicon Photonics


With the end of Moore’s Law rapidly approaching—some say it's already here—new applications of older technologies are gaining attention. One specific area of interest is photonics. The National Center for Optics and Photonic Education defines photonics as the technology of generating and harnessing light and other forms of radiant energy whose quantum unit is the photon. It can also be... » read more

Transistor-Level Performance Evaluation Based On Wafer-Level Process Modeling


Three years ago, I wrote a blog entitled “Linking Virtual Wafer Fabrication Modeling with Device-level TCAD Simulation,” in which I described the seamless connection between the SEMulator3D virtual wafer fabrication software platform and external third-party TCAD software. I’m now happy to report that device-level I-V performance analysis is now a built-in module within the SEMulator3D so... » read more

The Advantages Of FD-SOI Technology


If my memory serves me well, it was at the 1989 Device Research Conference where the potential merits of SOI (Silicon on Insulator) technology were discussed in a heated evening panel discussion. At that panel discussion, there were many advocates for SOI, as well as many naysayers. I didn’t really think more about SOI technology until the mid-nineties, when I was sitting in a meeting where t... » read more

Reducing BEOL Parasitic Capacitance Using Air Gaps


Reducing back-end-of-line (BEOL) interconnect parasitic capacitance remains a focus for advanced technology node development. Porous low-k dielectric materials have been used to achieve reduced capacitance, however, these materials remain fragile and prone to reliability concerns. More recently, air gap has been successfully incorporated into 14nm technology [1], and numerous schemes have b... » read more

What Drives SADP BEOL Variability?


Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are being used to meet the stringent patterning demands of advanced back-end-of-line (BEOL) technologies. For the 7nm technology node, patterning requirements include a metal pitch of 40nm or less. This ... » read more