Author's Latest Posts


Non-Destructive Measurement of Bottom Width in Deep Trench Isolation Structures using IRCD Metrology


As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in... » read more

Advanced FTIR Optical Modeling for Hydrogen Content Measurements in 3D NAND Cell Nitride and Amorphous Carbon Hard Mask


Abstract Fourier Transform Infrared spectroscopy offers inline solutions for chemical bonding, epi thickness, and trench depth measurements. Through optical modeling of the transmission or reflectance spectra, information about the electronic structure and chemical composition may be obtained, which can be used for process control and monitoring. In this article, we demonstrate the measurement... » read more

Using Deep Learning ADC For Defect Classification For Automatic Defect Inspection


In traditional semiconductor packaging, manual defect review after automated optical inspection (AOI) is an arduous task for operators and engineers, involving review of both good and bad die. It is hard to avoid human errors when reviewing millions of defect images every day, and as a result, underkill or overkill of die can occur. Automatic defect classification (ADC) can reduce the number of... » read more

Non-Destructive Metrology Techniques For Measuring Hole Profile In DRAM Storage Node


DRAM storage node profile measurement during high aspect ratio (HAR) etch has been one of the most challenging metrology steps. DRAM storage node profile affects refresh time and device electric quality. So, controlling this profile is one of the key challenges. Conventional 3D modeling in Optical Critical Dimension (OCD) metrology has typically used multiple cylinder stacks. This method cannot... » read more

Analysis Of Pattern Distortion By Panel Deformation And Addressing It By Using Extremely Large Exposure Field Fine-Resolution Lithography


The growing demand for heterogeneous integration is driven by the 5G market. This includes smartphones, data centers, servers, high-performance computing (HPC), artificial intelligence (AI) and internet of things (IoT) applications. Next-generation packaging technologies require tighter overlay to accommodate larger package sizes with fine-pitch chip interconnects on large-format flexible panel... » read more

Methods To Overcome Limited Labeled Data Sets In Machine Learning-Based Optical Critical Dimension Metrology


With the aggressive scaling of semiconductor devices, the increasing complexity of device structure coupled with tighter metrology error budget has driven up Optical Critical Dimension (OCD) time to solution to a critical point. Machine Learning (ML), thanks to its extremely fast turnaround, has been successfully applied in OCD metrology as an alternative solution to the conventional physical... » read more

The Human Hand: Curating Good Data And Creating An Effective Deep-Learning R2R Strategy For High-Volume Manufacturing


Currently, the semiconductor manufacturing industry uses artificial intelligence and machine learning to take data and autonomously learn from that data. With the additional data, AI and ML can be used to quickly discover patterns and determine correlations in various applications, most notably those applications involving metrology and inspection, whether in the front-end of the manufacturing ... » read more

Weaving Digital Threads Into A Global Fabric Of Enterprise Knowledge


How smart manufacturing software provides visibility and control of all phases of the semiconductor manufacturing process. Run-to-run (R2R) automated process control gathers critical data from each production run and automatically adjusts process parameters for the next run based on sophisticated models of process performance. Click here to read more. » read more

Large-Field, Fine-Resolution Lithography Enables Next-Generation Panel-Level Packaging


The lithography challenge for large heterogeneous integration is the limited size of the exposure field (typically 60mm x 60mm or less) for most currently available lithography systems. Fine resolution and a large field size provide the user with the opportunity to increase the package size beyond 150mm x 150mm and maintain high throughput. This new capability has the potential to pave the ... » read more

Extremely Large Exposure Field With Fine Resolution Lithography Technology To Enable Next Generation Panel Level Advanced Packaging


The growing demand for heterogeneous integration is driven by the 5G market that includes smartphones, data centers, servers, HPC, AI and IoT applications. Next-generation packaging technologies require tighter overlay to accommodate a larger package size with finer pitch chip interconnects on large format flexible panels. Heterogeneous integration enables next-generation device performance ... » read more

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