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Memory Technology: Innovations needed for continued technology scaling and enabling advanced computing systems
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "An increasing demand for data generation, storage, and intelligence generation from data is driving advances in memory technology and advanced computing applications. Memory performance is starting to define modern day computing in both mobile and server environments. There is an absolute need to continue the tremendous pace of memory technology improvements to deliver performanc... » read more

Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT)
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "This paper proposes an ultra-scaled memory device, called `Dynamic Flash Memory (DFM)'. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F2 cell can be achieved. Similar to DRAM [1], refresh is needed, but high speed block refresh can improve the duty ratio. Analogous to Flash [2], three fundamental operations of “0” Erase, “1” Program, and Read are nee... » read more

Convolutional Compaction-Based MRAM Fault Diagnosis
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "Spin-transfer torque magnetoresistive random-access memories (STT-MRAMs) are gradually superseding conventional SRAMs as last-level cache in System-on-Chip designs. Their manufacturing process includes trimming a reference resistance in STT-MRAM modules to reliably determine the logic values of 0 and 1 during read operations. Typically, an on-chip trimming routine consists of mult... » read more

MBIST-supported Trim Adjustment to Compensate Thermal Behavior of MRAM
By Technical Paper Link - 03 Sep, 2021 - Comments: 0

Abstract: "Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the most promising candidates to replace conventional embedded memory such as Static RAM and Dynamic RAM. However, due to the small on/off ratio of MRAM cells, process variations may reduce the operating margin of a chip. Reference trimming was suggested as one of the ways to reduce variation impact to the chi... » read more

Intermittent Undefined State Fault in RRAMs
By Technical Paper Link - 03 Sep, 2021 - Comments: 1

Abstract: " Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes the RRAM device to intermittently c... » read more

40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors
By Technical Paper Link - 31 Aug, 2021 - Comments: 0

Abstract: "This paper presents a 40 GHz voltage-controlled oscillator (VCO) and frequency divider chain fabricated in STMicroelectronics 28 nm ultrathin body and box (UTBB) fully depleted silicon-on-insulator (FD-SOI) complementary metal-oxide–semiconductor (CMOS) process with eight metal layers back-end-of-line (BEOL) option. VCOs architecture is based on an LC-tank with p-type metal-oxide�... » read more

Inner Spacer Engineering to Improve Mechanical Stability in Channel-Release Process of Nanosheet FETs
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

  Abstract "Mechanical stress is demonstrated in the fabrication process of nanosheet FETs. In particular, unwanted mechanical instability stemming from gravity during channel-release is covered in detail by aid of 3-D simulations. The simulation results show the physical weakness of suspended nanosheets and the impact of nanosheet thickness. Inner spacer engineering based on geometr... » read more

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
By Technical Paper Link - 28 Aug, 2021 - Comments: 0

Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689. PMID: 34203194; PMCID: PMC8307669. Find technical paper here. Abstract "In this paper, to solve the epitaxial thickness limit and the high in... » read more

Variational Quantum Algorithms (VQA)
By Technical Paper Link - 27 Aug, 2021 - Comments: 0

  Abstract "Applications such as simulating large quantum systems or solving large-scale linear algebra problems are immensely challenging for classical computers due their extremely high computational cost. Quantum computers promise to unlock these applications, although fault-tolerant quantum computers will likely not be available for several years. Currently available quantum device... » read more

Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE
By Technical Paper Link - 27 Aug, 2021 - Comments: 0

T. Fukushima, "Chiplet-Based Advanced Packaging Technology from 3D/TSV to FOWLP/FHE," 2021 Symposium on VLSI Circuits, 2021, pp. 1-2, doi: 10.23919/VLSICircuits52068.2021.9492335. Abstract: "More recently, "chiplets" are expected for further scaling the performance of LSI systems. However, system integration with the chiplets is not a new methodology. The basic concept dates back well over ... » read more

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