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Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT)

An ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F 2 cell can be achieved.

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Abstract:

“This paper proposes an ultra-scaled memory device, called `Dynamic Flash Memory (DFM)’. With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F2 cell can be achieved. Similar to DRAM [1], refresh is needed, but high speed block refresh can improve the duty ratio. Analogous to Flash [2], three fundamental operations of “0” Erase, “1” Program, and Read are needed, but fast random read and page program are available. Through 2D TCAD simulation, the three basic operations for Dynamic Flash Memory have been qualitatively validated.”

Find technical paper link here.

 

K. Sakui and N. Harada, “Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT),” 2021 IEEE International Memory Workshop (IMW), 2021, pp. 1-4, doi: 10.1109/IMW51353.2021.9439614.



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