From FinFETs To Gate-All-Around


When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

Extreme Quality Semiconductor Manufacturing


By Ben Tsai and Cathy Perry Sullivan Across the full range of semiconductor device types and design nodes, there is a drive to produce chips with significantly higher quality. Automotive, IoT and other industrial applications require chips that achieve very high reliability over a long period of time, and some of these chips must maintain reliable performance while operating in an environmen... » read more

What’s Next For Atomic Layer Etch?


After years in R&D, several fab tool vendors last year finally began to ship systems based a next-generation technology called atomic layer etch (ALE). [getkc id="284" kc_name="ALE"] is is moving into 16/14nm, but it will play a big role at 10/7nm and beyond. The industry also is working on the next wave of ALE technology for advanced logic and memory production. Used by chipmakers fo... » read more

What Transistors Will Look Like At 5nm


Chipmakers are currently ramping up 16nm/14nm finFET processes, with 10nm and 7nm just around the corner. The industry also is working on 5nm. TSMC hopes to deliver a 5nm process by 2020. GlobalFoundries, Intel and Samsung are doing R&D for that node. But 5nm technology presents a multitude of unknowns and challenges. For one thing, the exact timing and specs of 5nm remain cloudy. The... » read more