Pushing Memory Harder


In an optimized system, no component is waiting for another component while there is useful work to be done. Unfortunately, this is not the case with the processor/memory interface. Put simply, memory cannot keep up. Accessing memory is slow, and it can consume a significant fraction of the power budget. And the general consensus is this problem is not going away anytime soon, despite effort... » read more

Memory Subsystems In Edge Inferencing Chips


Geoff Tate, CEO of Flex Logix, talks about key issues in a memory subsystem in an inferencing chip, how factors like heat can affect performance, and where these kinds of chips will be used. » read more

Why DRAM Won’t Go Away


Semiconductor Engineering sat down to talk about DRAM's future with Frank Ferro, senior director of product management at Rambus; Marc Greenberg, group director for product marketing at Cadence; Graham Allan, senior product marketing manager for DDR PHYs at Synopsys; and Tien Shiah, senior manager for memory marketing at Samsung Electronics. What follows are excerpts of that conversation. Part ... » read more

Breaking Down The AI Memory Wall


Over the past few decades, the semiconductor industry has witnessed the rapid evolution of memory technology as new memories helped to usher in new usage models that characterized each decade. For example, synchronous memory helped drive the personal computer (PC) revolution in the 1990s, and this was quickly followed by specialized graphics memory (GPUs) for game consoles in the 2000s. When sm... » read more

Week In Review: Manufacturing, Test


China's DRAM efforts Two memory vendors from China, Tsinghua Unigroup and ChangXin Memory Technology, have disclosed more details about their respective efforts to enter the DRAM arena. As reported, Tsinghua Unigroup wants to enter the DRAM business. Now, the China-based firm has secured land to build a new DRAM fab. The firm recently signed an agreement with the Chongqing government to e... » read more

The Next New Memories


Several next-generation memory types are ramping up after years of R&D, but there are still more new memories in the research pipeline. Today, several next-generation memories, such as MRAM, phase-change memory (PCM) and ReRAM, are shipping to one degree or another. Some of the next new memories are extensions of these technologies. Others are based on entirely new technologies or involve ar... » read more

HBM2E: The E Stands for Evolutionary


Samsung introduced the first memory products in March that conform to JEDEC’s HBM2E specification, but so far nothing has come to market—a reflection of just how difficult it is to manufacture this memory in volume. Samsung’s new HBM2E (sold under the Flashbolt brand name, versus the older Aquabolt and Flarebolt brands), offers 33% better performance over HBM2 thanks to doubling the de... » read more

Do Superconducting Processors Really Need Cryogenic Memories? The Case For Cold DRAM


Cryogenic, superconducting digital processors offer the promise of greatly reduced operating power for server-class computing systems. This is due to the exceptionally low energy per operation of Single Flux Quantum circuits built from Josephson junction devices operating at the temperature of 4 Kelvin. Unfortunately, no suitable same-temperature memory technology yet exists to complement thes... » read more

AI Inference Memory System Tradeoffs


When companies describe their AI inference chip they typically give TOPS but don’t talk about their memory system, which is equally important. What is TOPS? It means Trillions or Tera Operations per Second. It is primarily a measure of the maximum achievable throughput but not a measure of actual throughput. Most operations are MACs (multiply/accumulates), so TOPS = (number of MAC units) x... » read more

DRAM Tradeoffs: Speed Vs. Energy


Semiconductor Engineering sat down to talk about new DRAM options and considerations with Frank Ferro, senior director of product management at Rambus; Marc Greenberg, group director for product marketing at Cadence; Graham Allan, senior product marketing manager for DDR PHYs at Synopsys; and Tien Shiah, senior manager for memory marketing at Samsung Electronics. What follows are excerpts of th... » read more

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