Author's Latest Posts

EUV OPC For 56nm Metal Pitch
By Various Writers - 18 Oct, 2012 - Comments: 0

For the logic generations of the 15 nm node and beyond, the printing of pitches at 64nm and below are needed. For EUV lithography to replace ArF-based multi-exposure techniques, it is required to print these patterns in a single exposure process. The k1 factor is roughly 0.6 for 64nm pitch at an NA of 0.25, and k1  0.52 for 56nm pitch. These k1 numbers are of the same order at which model base... » read more

Innovative Wafers For Energy-Efficient CMOS Technology
By Various Writers - 18 Oct, 2012 - Comments: 0

For continued attractiveness and competitiveness of advanced electronic appliances such as smartphones, TVs, notebooks or tablets, the semiconductor industry is moving to “fully depleted” transistor technology to build integrated circuits. This technology comes in two flavors: planar and tri-dimensional (FinFET), each with its own advantages and challenges. This White Paper explains how inn... » read more

Wafer Leaders Extend Basis for Global SOI Supply
By Various Writers - 16 Oct, 2012 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ It’s a bright green light from the world leaders in SOI wafer capacity. Soitec, the world leader in SOI wafer production, and long-time partner Shin-Etsu Handatai (SEH), the world’s biggest producer of silicon wafers, have extended their licensing agreement and expanded their technology cooperation. SEH is a $12... » read more

The IP Kit
By Various Writers - 11 Oct, 2012 - Comments: 0

This white paper focuses on how SoC designers and integrators can effectively assess the quality and completeness of soft IP cores. A methodology for accomplishing this goal is presented, and an overview is provided of the Atrenta IP Kit - an application of the SpyGlass platform that implements a soft IP quality qualification methodology. To download this white paper, click here. » read more

ST’s FD-SOI Tech Available to All Through GF
By Various Writers - 08 Oct, 2012 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ In the spring of 2012, STMicroelectronics announced the company would be manufacturing ST-Ericsson’s next-generation (and very successful) NovaThor ARM-based smartphone/tablet processors using 28nm FD-SOI process technology. With first samples coming out this fall, ASN talks to Jean-Marc Chery, Executive Vice Pres... » read more

Measuring RTOS Performance: What? Why? How?
By Various Writers - 27 Sep, 2012 - Comments: 0

In the world of smart phones and tablet PCs memory might be cheap, but in the more constrained universe of deeply embedded devices, it is still a precious resource. This is one of the many reasons why most 16- and 32-bit embedded designs rely on the services of a scalable real-time operating system (RTOS). An RTOS allows product designers to focus on the added value of their solution while dele... » read more

Technical Considerations For Implementing USB 3.0 On SoCs
By Various Writers - 27 Sep, 2012 - Comments: 0

The Universal Serial Bus (USB) protocol has been the standard way to connect computers to external devices for nearly two decades. The protocol continues to evolve to support the growing demands of consumer devices. With its simplicity of use, USB is the number one choice of connectivity protocols in the consumer world. USB 3.0 early adoption began in 2010. Now, key USB software and systems pro... » read more

SPOTLIGHT ON FD-SOI, FINFETS AT IEEE SOI CONFERENCE
;1-4 OCT, NAPA
By Various Writers - 25 Sep, 2012 - Comments: 0

The 38th annual SOI Conference is coming right up. Sponsored by IEEE Electron Devices Society, this is the only dedicated SOI conference covering the full technology chain from materials to devices, circuits and system applications. Chaired this year by Gosia Jurczak (manager of the Memories Program at imec), this excellent conference is well worth attending. It’s where the giants of the ... » read more

A Hybrid Model/Pattern-Based OPC Approach For Improved Consistency And TAT
By Various Writers - 20 Sep, 2012 - Comments: 0

As the technology advances, OPC run time turns to be a big concern, and a great deal of our effort is directed toward speeding up the litho operations. In addition, the OPC simulation consistency sometimes deteriorates, which is a critical issue—especially for anchor features. On the other hand, full-chip designs usually comprise large arrays of basic cells, used by OPC engineers to tune OPC ... » read more

Power And Performance: GSS Sees SOI Advantages For FinFETs
By Various Writers - 17 Sep, 2012 - Comments: 0

Are FinFETs better on SOI? In a series of papers, high-profile blogs and subsequent media coverage,Gold Standard Simulations (aka GSS) has indicated that, yes, FinFETs should indeed be better on SOI. To those of us not deeply involved in the research world, much of this may seem to come out of nowhere.  But there’s a lot of history here, and in this blog we’ll take a look at what it’s... » read more

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