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RF And Microwave Solid-State Power Amplifiers Design Is A Speciality


In the world of RF and microwave engineering, the design and development of solid-state amplifiers is a specialty. It has always required many years of specialized engineering experience and a suitable collection of test and measurement equipment. While these will always be necessary, to be successful in the marketplace today, it is also essential to use a combination of specialized and general... » read more

High-Performance 300 kW 3-Phase SiC Inverter Based On Next Generation Modular SiC Power Modules


Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of silicon carbide (SiC) MOSFETs. The inverter was designed with a holistic approach with careful consideration of module specifications, busbar technology, DC link capacitors, and a high-performance... » read more

How GaN On SiC Lowers 5G Base Station Costs


GaN’s higher efficiency at 5G frequencies compared with LDMOS also means a lower operating cost per bit/second and a lower carbon footprint. Wolfspeed, a Cree company, and dominant player in the GaN on SiC device market, estimates that GaN on SiC can save over 200 W of DC power compared to a system that uses LDMOS power amplifiers (PAs) when operated at maximum average power. Continue read... » read more

Fast-Charging Technology: The Key To Speeding Electric Vehicle Adoption


As the EV market continues to grow and expand, the demand for fast chargers will continue to soar, and the space, efficiency, and system cost gains provided by SiC in various applications will become an increasingly important advantage. Click here to read more. » read more

Meeting Commercial Demands With XM3 Module Platform


While silicon carbide (SiC) is still considered a relatively new material in the semiconductor market, it is now used in power circuitry that supports our everyday lifestyle — from the data centers that deliver our emails, to solar power grids that provide energy to offices and homes, to electric cars and trains we use to commute, and in factory equipment and robots that manufacture the goods... » read more

GaN on SiC: The Only Viable Long-Term Solution for 5G


The 5G wave that’s been building for many years will finally come to shore in 2019. Early (but extremely limited) service rollouts will gain much fanfare and the first round of 5G-enabled devices will begin to hit markets. Wider commercial deployments, however, are still off in the distance and will be a slow but growing wave from 2020 to 2025. CCS Insight predicts 1 billion 5G users globally... » read more

Replenishing The Grid With A SiC-Based Bi-Directional On-Board Charger


Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids. The migration to electric vehicles also means looking at how they can bett... » read more

New SiC Power Modules Deliver Greater Power Densities In Smaller Packages Than Si IGBTs


With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules. Un... » read more

Wolfspeed GaN: Rugged Enough For Tracking Space Junk, Rugged Enough For 5G


GaN RF devices are used throughout the world on projects in a broad range of applications such as surveillance and weather radar, first responder communications, and improvised explosive device (IED) protection systems, where downtime is not an option. But are they rugged and reliable enough to tackle the harshest environments the telecom market can hand out, especially as it relates to 5G smal... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies


This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

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