The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications.
With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules.
Until recently, the power module market has been dominated by silicon insulated-gate bipolar transistors (Si IGBTs). The shift in demand and focus on better performance has made these legacy modules less desirable for high power applications, which has led to the rise of silicon carbide-based power devices. New SiC components are able to deliver higher voltage and current performance (power) in less space than their silicon-based counterparts, enabling high-power density modules with minimal parasitics and high temperature operation.
This article aims to educate power engineers and professionals on the advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. A comparison of the two technologies is outlined, as well as a demonstration of the capabilities of the latest full SiC power modules in a three-phase inverter reference design application.
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