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200mm Shortages May Persist For Years


A surge in demand for chips at more mature process nodes is causing shortages for both 200mm foundry capacity and 200mm equipment, and it shows no signs of letting up. In fact, even with new capacity coming on line this year, shortages are likely to persist for years, driving up prices and forcing significant changes across the semiconductor supply chain. Shortages for both 200mm foundry cap... » read more

Inspecting And Testing GaN Power Semis


As demand for new automotive battery electric vehicles (BEVs) heats up, automakers are looking for solutions to meet strict zero-defect goals in power semiconductors. Gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap power semiconductors offer automakers a range of new EV solutions, but questions remain on how to meet the stringent quality goals of the automotive industry. Among t... » read more

Revving Up SiC And GaN


Silicon carbide (SiC) and gallium nitride (GaN) are becoming more popular for power electronics, particularly in automotive applications, driving down costs as volumes scale up and increasing the demand for better tools to design, verify, and test these wide-bandgap devices. Both SiC and GaN are proving essential in areas such as battery management in electric vehicles. They can handle much ... » read more

China Accelerates Foundry, Power Semi Efforts


China has unveiled several initiatives to advance its domestic semiconductor industry, including a new and massive fab expansion campaign in the foundry, gallium-nitride (GaN), and silicon carbide (SiC) markets. The nation is making a big push into what it calls “third-generation semiconductors,” which is a misnomer. The term actually refers to two existing and common power semiconductor... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs


If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities


Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Inspecting, Testing, And Measuring SiC


Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

Week In Review: Manufacturing, Test


Government policy Hoping to resolve the ongoing worldwide chip shortage situation, the U.S. Department of Commerce late last month launched a “request for information (RFI)” initiative, which involved sending questionnaires to various semiconductor companies. The U.S. government is asking all parts of the supply chain – producers, consumers, and intermediaries – to voluntarily share in... » read more

The Silicon Carbide Race Begins


The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

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