DC Bus Switching Performance as Determined by Commutation Loop Parasitics and Switching Dynamics


In this article a 250 kW all-SiC inverter evaluation kit designed around low-inductance, high-speed power modules is used to demonstrate the DC bus switching performance resulting from the interaction among commutation loop parasitics and the switching dynamics. The interplay among the DC bus structure parasitics and near-RF switching dynamics can be quantified in both the time and frequency do... » read more

Inspection, Metrology Challenges Grow For SiC


Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more

SiC Demand Growing Faster Than Supply


The silicon carbide (SiC) industry is in the midst of a major expansion campaign, but suppliers are struggling to meet potential demand for SiC power devices and wafers in the market. In just one example of the expansion efforts, Cree plans to invest up to $1 billion to increase its SiC fab and wafer capacities. As part of the plan, Cree is developing the world’s first 200mm (8-inch) SiC f... » read more

Week in Review: IoT, Security, Auto


Internet of Things Verizon Communications launched its nationwide narrowband Internet of Things network, saying it covers more than 92% of the U.S. population. “There is a whole universe of smart solutions needing scalable and affordable connections,” Jeffrey Dietel, senior vice president of business marketing and products, said in a statement. “By launching our NB-IoT network, Verizon i... » read more

Week In Review: Manufacturing, Test


Trade More trade news: "The Trump administration is hiking duties on $200 billion worth of Chinese products to 25% from 10%," according to CNBC. The following is attributed to Gary Shapiro, president and CEO of the Consumer Technology Association (CTA), in response to President Trump’s plan to increase tariffs on $200 billion worth of Chinese imports to 25%: “The president is seeking a bet... » read more

Week In Review: Manufacturing, Test


Chipmakers TrendForce released its foundry rankings for the first quarter of 2019. TSMC is still the clear leader, followed in order by Samsung, GlobalFoundries and UMC, according to the firm. It was a tough quarter for all foundries. Samsung has rolled out its new High Bandwidth Memory (HBM2E) product. The new solution, called Flashbolt, is the industry’s first HBM2E to deliver a 3.2Gbps... » read more

Accelerating Adoption of SiC Power


The market has heard for many years about wide bandgap product roadmaps and concepts, touting that many possibilities could be available. However, you can’t design in a PowerPoint presentation or a preliminary datasheet, so this article will reinforce that Wolfspeed SiC power has moved way beyond any hype, talk, and fake news and has pioneered the widespread adoption of silicon carbide power ... » read more

150MM Alive and Kicking


Did you think chip making on 150mm wafers was a thing of the past? Think again. Many of the megatrends shaping our collective futures—mobility, autonomous driving and electric vehicles, 5G wireless communications, augmented- and virtual reality (AR/VR), and healthcare—depend on innovations created on the 150mm wafer size. While attention is often riveted on the race to the leading-edge n... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Diamond semiconductor IP vendor AKHAN Semiconductor is cooperating with a U.S. federal investigation into alleged theft of its intellectual property by China’s Huawei. When AKHAN agreed to send its proprietary technology to Huawei pursuant to an agreement, AKHAN “believes that Huawei destroyed our product, shipped it to China without authorization, subjected it to tests... » read more

Manufacturing Bits: April 10


Higher power GaN Imec and Qromis have announced the development of a new gallium nitride (GaN) substrate technology that enables power devices at 650 volts and above. GaN is an emerging technology for power semiconductor applications. Based on a GaN-on-silicon technology, GaN-based power semis operate at 650 volts and above. In simple terms, the buffer layers between the GaN device and the ... » read more

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