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SiC And Industrial Servos: A Perfect Match


The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor control, sensor, and power technology we have available today. Today’s biggest challenge remains the cabling between the servo and its controller. Notoriously expensive, due to having to withsta... » read more

Power, Performance — Avionics Designers Want It All


Not long ago, the prevailing philosophy among chip designers for aviation systems could be summed up as, “I feel the need — the need for speed.” Today, aviation’s top guns have pulled back on the throttle a bit. There’s a more nuanced discussion balancing the need for performance versus power, with other factors coming into consideration such as safety, security certifications and ove... » read more

A Revolution For Power Conversion Systems — CoolSiC MOSFET


Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Manufacturing Bits: May 25


Higher voltage GaN Imec and Aixtron have demonstrated the ability to extend gallium-nitride (GaN) to new voltage levels in the power semiconductor market, enabling the technology to compete in much broader segments. Imec and Aixtron have demonstrated epitaxial growth of GaN buffer layers qualified for 1,200-volt applications on specialized 200mm substrates with a hard breakdown exceeding 1,... » read more

Week In Review: Design, Low Power


Synopsys completed its acquisition of MorethanIP, a provider of Ethernet Digital Controller IP supporting data rates from 10G to 800G. The acquisition adds MAC (Medium Access Controller) and PCS (Physical Coding Sublayer) for 200G/400G and 800G Ethernet to Synopsys’ portfolio. The company also provides Time-Sensitive Networking, Fibre Channel, and Ethernet Switching IP for integration into AS... » read more

Manufacturing Bits: April 20


SiC power semi R&D Earth Day, which supports environmental protection, takes place this week on April 22. Technology plays a big role in the environment. Governments, companies, R&D organizations and universities are developing a multitude of environmental-related technologies. In just one example, Swansea University has been awarded £4.8 million from the government of the Unite... » read more

SiC MOSFETs In The Landscape Of Modern Power Devices


Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

Increasing The Conductive Density Of Packaging


Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

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