The Chemistry Of Semiconductors


At each new process node, the chemistry of chip manufacturing has become much more complex than at previous nodes. But at 5nm and below, it's going to get orders of magnitude more complex. For the first few decades, the chemistry of chips was largely shielded from view for most of the industry. Caustic gases were relatively well understood because they are a potential health hazard, but the ... » read more

High-Performance 300 kW 3-Phase SiC Inverter Based On Next Generation Modular SiC Power Modules


Wolfspeed presents a new high-performance, low-cost, compact 3-phase inverter based on next generation power modules which are specifically optimized to fully utilize Wolfspeed’s third generation of silicon carbide (SiC) MOSFETs. The inverter was designed with a holistic approach with careful consideration of module specifications, busbar technology, DC link capacitors, and a high-performance... » read more

Making Chips At 3nm And Beyond


Select foundries are beginning to ramp up their new 5nm processes with 3nm in R&D. The big question is what comes after that. Work is well underway for the 2nm node and beyond, but there are numerous challenges as well as some uncertainty on the horizon. There already are signs that the foundries have pushed out their 3nm production schedules by a few months due to various technical issu... » read more

Fast-Charging Technology: The Key To Speeding Electric Vehicle Adoption


As the EV market continues to grow and expand, the demand for fast chargers will continue to soar, and the space, efficiency, and system cost gains provided by SiC in various applications will become an increasingly important advantage. Click here to read more. » read more

Manufacturing Bits: Feb. 25


Diamond finFETs HRL Laboratories has made new and significant progress to develop diamond finFETs. HRL, a joint R&D venture between Boeing and General Motors, has developed a new ohmic regrowth technique for diamond FETs. This in turn could pave the way towards commercial diamond FETs. Applications include spacecraft, satellites and systems with extreme temperatures. Still in R&D, diamo... » read more

How Silicon Carbide Is Improving Energy Efficiency & Lowering Costs In Industrial Applications


Industrial applications such as server power supplies, uninterruptible power supplies (UPS), and motor drives consume a significant portion of the world’s power. Thus, any increase in the efficiency of any end user power system will substantially reduce a company’s operating costs. Combined with greater power density and better thermal performance, the demand for high-efficiency power suppl... » read more

MOCVD Vendors Eye New Apps


Several equipment makers are developing or ramping up new metalorganic chemical vapor deposition (MOCVD) systems in the market, hoping to capture the next wave of growth applications in the arena. Competition is fierce among the various MOCVD equipment suppliers in the market, namely Aixtron, AMEC and Veeco. In addition, MOCVD equipment suppliers are looking for renewed growth in 2020, but b... » read more

Meeting Commercial Demands With XM3 Module Platform


While silicon carbide (SiC) is still considered a relatively new material in the semiconductor market, it is now used in power circuitry that supports our everyday lifestyle — from the data centers that deliver our emails, to solar power grids that provide energy to offices and homes, to electric cars and trains we use to commute, and in factory equipment and robots that manufacture the goods... » read more

GaN on SiC: The Only Viable Long-Term Solution for 5G


The 5G wave that’s been building for many years will finally come to shore in 2019. Early (but extremely limited) service rollouts will gain much fanfare and the first round of 5G-enabled devices will begin to hit markets. Wider commercial deployments, however, are still off in the distance and will be a slow but growing wave from 2020 to 2025. CCS Insight predicts 1 billion 5G users globally... » read more

Manufacturing Bits: Dec. 31


GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

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