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China Accelerates Foundry, Power Semi Efforts


China has unveiled several initiatives to advance its domestic semiconductor industry, including a new and massive fab expansion campaign in the foundry, gallium-nitride (GaN), and silicon carbide (SiC) markets. The nation is making a big push into what it calls “third-generation semiconductors,” which is a misnomer. The term actually refers to two existing and common power semiconductor... » read more

Choosing A Gate Driver For Silicon Carbide MOSFETs


If you are going to use a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in your next development, you will ask yourself: how do I develop the best gate driver for it? The answer to this question is: identify a suitable gate driver IC based on the peak current and power dissipation requirements of your application and a fitting gate resistor for your SiC... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities


Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

Inspecting, Testing, And Measuring SiC


Achieving the auto industry's stringent zero defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150mm to 200mm wafers and shift their focus away from pure silicon. SiC is a combination of silicon and harder carbide materials, and it has emerged as a key technology for batter... » read more

Week In Review: Manufacturing, Test


Government policy Hoping to resolve the ongoing worldwide chip shortage situation, the U.S. Department of Commerce late last month launched a “request for information (RFI)” initiative, which involved sending questionnaires to various semiconductor companies. The U.S. government is asking all parts of the supply chain – producers, consumers, and intermediaries – to voluntarily share in... » read more

The Silicon Carbide Race Begins


The growing adoption of silicon carbide (SiC) for a variety of automotive chips has reached the tipping point where most chipmakers now consider it a relatively safe bet, setting off a scramble to stake a claim and push this wide-bandgap technology into the mainstream. SiC holds great promise for a number of automotive applications, particularly for battery electric vehicles. It can extend d... » read more

Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Short-Circuit Ruggedness In SiC MOSFETs


Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching devices. As a result, outstanding system performance is achieved, enabling higher efficiency, power density, and reduced system cost for many applications. Today, for major target applications for S... » read more

Next-Level Power Density In Solar And Energy Storage With Silicon Carbide MOSFETs


Latest generation silicon carbide semiconductors enable a significant increase in power conversion efficiency in solar power generation systems and associated energy storage. This white paper describes the applications and outlines how lower loss not only saves energy, but also results in smaller and lighter equipment with lower capital, installation and maintenance costs. Click here to read... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs China has been working on compound semiconductors, such as gallium-nitride (GaN) and silicon carbide (SiC). Now, a China-backed company has taken a big step in the SiC and related markets. Chip supplier Nexperia, a subsidiary of China’s Wingtech Technology, has acquired Newport Wafer Fab (NWF), a U.K.-based manufacture of power and compound semiconductors, including Si... » read more

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