tag: SiC

Application-Oriented Testing Of SiC Power Semiconductors
By NI - 09 Jan, 2024 - Comments: 0

SiC (silicon carbide) has established itself as an important material in the semiconductor market because it has many outstanding properties. In comparison with silicon, SiC offers a higher electrical breakdown voltage, resulting in improved component performance and efficiency. It also allows for operation at higher temperatures, which makes heat dissipation easier and enables improved perform... » read more

Using FTIR To Improve SiC Power Device Performance
By Nick Keller - 09 Jan, 2024 - Comments: 0

The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Big Shifts In Power Electronics Packaging
By Laura Peters - 16 Nov, 2023 - Comments: 0

The power semiconductor market is poised for remarkable growth in the next several years, fueled by the adoption of electric vehicles and renewable energy, but it also driving big changes in the packaging needed to protect and connect these devices. Packaging is playing an increasingly critical role in the transition to higher power densities, enabling more efficient power supplies, power deli... » read more

Addressing Trench Structures And Larger Wafers For Power Devices
By Vamsi Velidandla - 07 Nov, 2023 - Comments: 0

Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)
By Technical Paper Link - 06 Oct, 2023 - Comments: 0

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: "The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFE... » read more

Week In Review: Manufacturing, Test
By Karen Heyman - 25 Aug, 2023 - Comments: 0

Intel aims to quadruple capacity for its most advanced chip packaging services by 2025, including with a new facility in Malaysia, per Nikkei Asia. Huawei is building a collection of secret semiconductor fabrication facilities across China to let the company skirt U.S. sanctions, SIA warned in a presentation seen by Bloomberg. It’s acquired at least two existing plants and is building at l... » read more

Power Semis Usher In The Silicon Carbide Era
By Laura Peters - 21 Aug, 2023 - Comments: 1

Silicon carbide production is ramping quickly, driven by end market demand in automotive and price parity with silicon. Many thousands of power semiconductor modules already are in use in electric vehicles for on-board charging, traction inversion, and DC-to-DC conversion. Today, most of those are fabricated using silicon-based IGBTs. A shift to silicon carbide-based MOSFETs doubles the powe... » read more

Week In Review: Manufacturing, Test
By Karen Heyman - 11 Aug, 2023 - Comments: 0

TSMC, Bosch, Infineon, and NXP will jointly invest in the European Semiconductor Manufacturing Co. (ESMC), in Dresden, Germany, to provide advanced semiconductor manufacturing services. ESMC marks a significant step toward construction of a 300mm fab, which is expected to have a monthly production capacity of 40,000 300mm (12-inch) wafers on TSMC’s 28/22nm planar CMOS and 16/12nm finFET proce... » read more

SiC Growth For EVs Is Stressing Manufacturing
By Anne Meixner - 08 Aug, 2023 - Comments: 0

The electrification of vehicles is fueling demand for silicon carbide power ICs, but it also is creating challenges in finding and identifying defects in those chips. Coinciding with this is a growing awareness about just how immature SiC technology is and how much work still needs to be done — and how quickly that has to happen. Automakers are pushing heavily into electric vehicles, and t... » read more

Direct Synthesis of Planar (2D) Micro and Nanopatterned Epitaxial Graphene on SiC
By Technical Paper Link - 28 Jul, 2023 - Comments: 0

A technical paper titled “Direct synthesis of nanopatterned epitaxial graphene on silicon carbide” was published by researchers at University of Technology Sydney, Ludwig-Maxilimians Universität München, Monash University, and Imperial College London. Abstract: "This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy