Replenishing The Grid With A SiC-Based Bi-Directional On-Board Charger


Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids. The migration to electric vehicles also means looking at how they can bett... » read more

Week In Review: Manufacturing, Test


Chipmakers For some time, Intel has experienced supply constraints and shortages for its 14nm chip products. Apparently, the company is still having issues with both 14nm and 10nm. “Despite our best efforts, we have not yet resolved this challenge,” according to a statement from Michelle Johnston Holthaus, executive vice president and general manager of the Sales, Marketing and Communicati... » read more

New SiC Power Modules Deliver Greater Power Densities In Smaller Packages Than Si IGBTs


With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules. Un... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation


Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

SiC Market Moves Into Overdrive


The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Wolfspeed GaN: Rugged Enough For Tracking Space Junk, Rugged Enough For 5G


GaN RF devices are used throughout the world on projects in a broad range of applications such as surveillance and weather radar, first responder communications, and improvised explosive device (IED) protection systems, where downtime is not an option. But are they rugged and reliable enough to tackle the harshest environments the telecom market can hand out, especially as it relates to 5G smal... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies


This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

Week In Review: Manufacturing, Test


Fab tools Lam Research has rolled out two new tools for use in the production of 3D NAND. The first tool, called the VECTOR DT, is geared for backside deposition. The second system, the EOS GS, is a wet etch tool for film removal on backside and bevel. Designed to control the wafer bow in 3D NAND manufacturing, the VECTOR DT system is the latest addition to Lam’s plasma-enhanced chemical ... » read more

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