SiC Market Moves Into Overdrive


The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Wolfspeed GaN: Rugged Enough For Tracking Space Junk, Rugged Enough For 5G


GaN RF devices are used throughout the world on projects in a broad range of applications such as surveillance and weather radar, first responder communications, and improvised explosive device (IED) protection systems, where downtime is not an option. But are they rugged and reliable enough to tackle the harshest environments the telecom market can hand out, especially as it relates to 5G smal... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies


This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more

Week In Review: Manufacturing, Test


Fab tools Lam Research has rolled out two new tools for use in the production of 3D NAND. The first tool, called the VECTOR DT, is geared for backside deposition. The second system, the EOS GS, is a wet etch tool for film removal on backside and bevel. Designed to control the wafer bow in 3D NAND manufacturing, the VECTOR DT system is the latest addition to Lam’s plasma-enhanced chemical ... » read more

Cloudy Outlook Seen For IC Biz


After a slowdown in the first half of 2019, chipmakers and equipment vendors face a cloudy outlook for the second half of this year, with a possible recovery in 2020. Generally, the semiconductor industry began to see a slowdown starting in mid- to late-2018, which extended into the first half of 2019. During the first half of this year, memory and non-memory vendors were negatively impacted... » read more

200mm Cools Off, But Not For Long


After years of acute shortages, 200mm fab capacity is finally loosening up, but the supply/demand picture could soon change with several challenges on the horizon. 200mm fabs are older facilities with more mature processes, although they still churn out a multitude of today’s critical chips, such as analog, MEMS, RF and others. From 2016 to 2018, booming demand for these and other chips ca... » read more

A Novel Design Method of Highly Efficient Saturated Power Amplifier Based On Self-Generated Harmonic Currents


A novel design method without requiring the special harmonic termination circuit for a highly efficient power amplifier (PA) is proposed. The proposed PA is driven into saturated operation, from the linear to knee region, by adjusting the only fundamental load, and the saturated operation induces self-generated harmonic currents. The current and voltage waveforms can be shaped easily by the har... » read more

DC Bus Switching Performance as Determined by Commutation Loop Parasitics and Switching Dynamics


In this article a 250 kW all-SiC inverter evaluation kit designed around low-inductance, high-speed power modules is used to demonstrate the DC bus switching performance resulting from the interaction among commutation loop parasitics and the switching dynamics. The interplay among the DC bus structure parasitics and near-RF switching dynamics can be quantified in both the time and frequency do... » read more

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