中文 English

SiC MOSFETs In The Landscape Of Modern Power Devices


Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated Gate Bipolar Transistors) have been the prevailing component of choice before. But which role do SiC MOSFETs play in today’s landscape of power devices? With SiC MOSFETs (Metal-Oxide-Semicond... » read more

IC Materials For Extreme Conditions


The number of materials being researched for chips used in extreme environments, such as landing on the planet Venus, is growing. While GaN has captured much of the attention for power conversion circuits, it's just one of several applications for semiconductors in extreme environments. The high voltage, high temperature, and caustic atmospheres found in many industrial and aerospace environ... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

Increasing The Conductive Density Of Packaging


Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

48V Applications Drive Power IC Package Options


The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more

Mobility And 5G Drive Adoption Of New Materials For Power Devices


Electric mobility, renewable energy, and other technology innovations like IoT, 5G, smart manufacturing, and robotics all require reliability, efficiency, and compact power systems, fueling the adoption of silicon carbide (SiC) and gallium nitride (GaN) to support lower voltages in significantly smaller devices. But chip designers must overcome the technological and economical challenges of int... » read more

Using ICs To Shrink Auto’s Carbon Footprint


A large portion of the burden for reducing greenhouse gases is being handed off to makers of automotive chips and systems, which are being tasked to make vehicles drive further using less energy and with zero emissions. The effort is critical in battling climate change. According to the U.S. Environmental Protection Agency, the transportation sector represented 28.2% of 2018 greenhouse gas e... » read more

Power Amp Wars Begin For 5G


Demand is increasing for power amplifier chips and other RF devices for 5G base stations, setting the stage for a showdown among different companies and technologies. The power amplifier device is a key component that boosts the RF power signals in base stations. It's based on two competitive technologies, silicon-based LDMOS or RF gallium nitride (GaN). GaN, a III-V technology, outperforms ... » read more

China Speeds Up Advanced Chip Development


China is accelerating its efforts to advance its domestic semiconductor industry, amid ongoing trade tensions with the West, in hopes of becoming more self-sufficient. The country is still behind in IC technology and is nowhere close to being self-reliant, but it is making noticeable progress. Until recently, China’s domestic chipmakers were stuck with mature foundry processes with no pres... » read more

Improving Reliability For GaN And SiC


Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

← Older posts