tag: silicon carbide

SiC Foundry Business Emerges
By Mark LaPedus - 23 Jan, 2020 - Comments: 0

Several third-party foundry vendors are entering or expanding their efforts in the silicon carbide (SiC) business amid booming demand for the technology. However, making a significant dent in the market will not be so easy for SiC foundry vendors and their customers. They are facing stiff competition from traditional SiC device vendors such as Cree, Infineon, Rohm and STMicroelectronics. ... » read more

Accelerating Silicon Carbide Power Electronics Devices Into High Volume Manufacturing With Mechanical Dicing System
By Veeco - 16 Dec, 2019 - Comments: 0

Silicon carbide (SiC) is a wideband gap semiconductor material that has huge potential to enrich our lives by enabling better technology with improved connectivity and efficiency. It offers many advantages over common silicon (Si) for power applications as it can be doped much higher than silicon to achieve optimal blocking voltage. In addition, SiC high thermal conductivity characteristic enab... » read more

RF GaN Gains Steam
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Power Semi Wars Begin
By Mark LaPedus - 23 Oct, 2019 - Comments: 1

Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

New SiC Power Modules Deliver Greater Power Densities In Smaller Packages Than Si IGBTs
By Wolfspeed, a Cree Company - 16 Oct, 2019 - Comments: 0

With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules. Un... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation
By Technical Paper Link - 02 Oct, 2019 - Comments: 0

Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

SiC Market Moves Into Overdrive
By Mark LaPedus - 19 Sep, 2019 - Comments: 0

The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 13 Sep, 2019 - Comments: 0

Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

Manufacturing Bits: Sept. 3
By Mark LaPedus - 03 Sep, 2019 - Comments: 1

Modeling SiC defects The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). Defectivity is an issue for SiC, a compound semiconductor material based on silicon and carbon. Today, SiC is used to make specialized power semiconductors for high-voltage applications, such as electric ... » read more

Silicon Carbide’s Superpowers
By Llew Vaughan-Edmunds - 15 Aug, 2019 - Comments: 0

As we enter a new computing era driven by the Internet of Things (IoT), Big Data and Artificial Intelligence (AI), demand is growing for more energy-efficient chips. In this context, we usually think about Moore’s Law and reducing the size of transistors. However, advances in power semiconductors are not governed by node size reduction. Silicon power switches, such as MOSFETs and IGBTs, ar... » read more

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