The Specialty Device Surge Part 2: The Process Control Challenges Of MEMS, Co-Packaged Optics, And More


In a world where high-bandwidth memory, GPUs, and advanced AI packages are all the rage, it is easy to forget the important role specialty devices play. These unsung heroes of modern life perform critical functions across a wide range of industries, including automotive, telecommunications, data centers, emerging AI hardware ecosystems, and consumer electronics, just like the smartphone in your... » read more

Research Bits: Sept. 16


Beyond-EUV resists Researchers from Johns Hopkins University, East China University of Science and Technology, École Polytechnique Fédérale de Lausanne (EPFL), Soochow University, Brookhaven National Laboratory, and Lawrence Berkeley National Laboratory propose a combination of new resist materials and a higher-powered EUV process that could enable smaller chip feature sizes. The "beyond... » read more

End-to-End Yield Management for Compound Semiconductors Manufacturing


Abstract: Progress in compound semiconductors is hindered by the high level of defectivity of the initial material. Here we take Silicon Carbide manufacturing technology as an example and provide an overview of manufacturing analytics tools and methodologies used to drive yield ramp and capacity expansion. We focus on 2 examples of site-to-site handoff: substrates handoff to IC front-end fab or... » read more

The Race To Replace Silicon


For over 75 years, silicon has been the dominant material in the evolution of modern electronics, powering everything from smartphones to satellites. But as chipmakers push toward smaller nodes, higher power efficiency, and quantum-scale precision, a pressing question is echoing across fabs and R&D labs worldwide: Is it time to move beyond silicon? In this blog post, we explore the growi... » read more

Electrifying Everything: Power Moves Toward ICs


As electronic systems grow increasingly complex and energy-intensive, traditional power management methods — centered on centralized systems and external components — are proving inadequate. The next wave of innovation is to bring power control closer to the action — directly on the chip or into a heterogeneous package. This change is driven by a relentless pursuit of efficiency, scala... » read more

Silicon Carbide And Gallium Nitride Bring New Challenges For Semiconductor Test


In the era of megatrends such as electric vehicles (EVs), new technologies are emerging to keep up with evolving demands. One example of this is the evolution of compound semiconductors that use silicon carbide (SiC) and gallium nitride (GaN) for high-performance power systems. Innovating test protocols to handle wide bandgap materials For many power-related applications, the semiconductor in... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 2


In the first part of this blog, we had a look at how energy-efficient high-power modules contribute to the decarbonization of railway transportation. This part will focus on the future of traction: high-power silicon carbide modules, their key features, and the multiple system benefits they enable. Silicon carbide power modules and hybrid-propulsion trains: It’s a match! As we inch toward... » read more

Sustainable Rail Transportation With High Power SiC Modules: Part 1


The process of electrification of railways, though crucial for achieving net-zero climate targets, is nevertheless far from being complete.  Let's delve into how high-power semiconductor technologies are accelerating the decarbonization of rail transport, making it cleaner, safer, and smarter. Decarbonization of transportation: Unraveling the global picture According to the International Ene... » read more

Driving Cost Lower and Power Higher With GaN


Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven by lower costs and processes that are more compatible with bulk silicon. Efficiency, power density (size), and cost are the three major concerns in power electronics, and GaN can meet all three c... » read more

SiC Power Electronics Packaging: Floating Die Structure and Liquid Metal Fluidic Connection (Cambridge U. )


A new technical paper titled "Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging" was published by researchers at Cambridge University. Abstract "Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electroni... » read more

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