The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, requiring a commercially viable solution for MMIC integration.
Mobile data traffic continues to grow. Constant video streaming is on the rise in applications like TikTok, Netflix, and Instagram, while emerging AI-enhanced mobile apps are set to further boost data consumption by offering highly personalized experiences and advanced features like augmented reality and voice processing in real-time. Ericsson estimates that mobile data traffic, excluding fixed wireless access, is going to increase by a factor of 3x by 2029.
While mobile traffic is expected to increase by multiples, revenues at mobile network operators are expected to stay flat. This is because the so-called “killer app” for 5G that helps to monetize new capabilities has not been found yet. This means customers continue paying the same for their 5G contract as they did for 4G.
This challenges network operators and radio manufacturers to manage a much higher data capability at the same total cost, necessitating a significant reduction in the cost per bit. This can be achieved by optimizing a multitude of levers. For instance, combining frequency bands in one radio unit and employing wider frequency bands can reduce the number of required radios. Additionally, reducing the size and weight of radios will lower tower rental costs, while reducing the consumed energy per radio will lower operator energy bills. Higher frequency bands need to be utilized, especially in high-density urban areas. To do this in a cost-efficient way, the grid of the radio base station should remain unchanged. This results in radios operating at 6 GHz to 10 GHz, covering the same area as those operating at half that frequency, which is around, 3 GHz to 5 GHz. Finally, the cost of radio components is under pressure to lower initial capital expenditures.
Breaking these requirements down for 5G radios, the RF power amplifiers (PAs) need to support higher frequencies, significantly wider instantaneous bandwidths, and high efficiency over a wide back-off range. These radios must also be capable of being linearized at levels below 50 dBc with digital predistortion (DPD). The semiconductor technologies capable of delivering those targets at a commercially viable price position are RF GaN-on-SiC and RF GaNon-Si.
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