Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs


A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more