Ge-Based Multigate SBFETs Operated In An NDR Mode (TU Wien, JKU)


A new technical paper titled "Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors" was published by researchers at TU Wien and JKU (Johannes Kepler University). Abstract: "The co-integration of negative differential resistance (NDR) and Si-based CMOS technology might be a promising concept for multimode devices and circuits with enhanced performance... » read more