中文 English

Novel Etch Technologies Utilizing Atomic Layer Process For Advanced Patterning


We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO2 and SiC films. In addition, we have developed selective etch of SiC with N ion modification. On the other hand, in the patterning etch processes,... » read more

Advanced Patterning Techniques For 3D NAND Devices


By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more