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ASD process that was performed in situ on the etch chamber


New research paper entitled "Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement" from TEL Technology Center, Americas and IBM Research. Abstract: "Extreme ultraviolet (EUV) lithography has overcome significant challenges to become an essential enabler to the logic scaling roadmap. However, it remains limited by stocha... » read more

Extending Copper Interconnects To 2nm


Transistor scaling is reaching a tipping point at 3nm, where nanosheet FETs will likely replace finFETs to meet performance, power, area, and cost (PPAC) goals. A significant architectural change is similarly being evaluated for copper interconnects at 2nm, a move that would reconfigure the way power is delivered to transistors. This approach relies on so-called buried power rails (BPRs) and... » read more

System Bits: July 26


Mixing topology, spin MIT researchers are studying new compounds, such as topological insulators (TIs), which support protected electron states on the surfaces of crystals that silicon-based technologies cannot as part of the pursuit of material platforms for the next generation of electronics. They report new physical phenomena being realized by combining this field of TIs with the subfiel... » read more