A new technical paper titled "Impact of Strain on Sub-3 nm Gate-all-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach" was published by researchers at Hanyang University and Alsemy Inc.
Abstract
"Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D...
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