Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design


A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Nanosheet GAAFETs: Compact Modeling (Politecnico di Torino)


A technical paper titled “NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance” was published by researchers at Politecnico di Torino. Abstract: "NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as ... » read more

Using Dynamic Route Map Technique for Insight Into Memristors


New technical paper titled "Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map," from Balearic Islands University, UC Berkeley, Health Institute of the Balearic Islands, International Hellenic University, Technische Universität Dresden, Universidad de Valladolid, and Aristotle University of Thessaloniki. Abstract: "Memristors were proposed in the early 1... » read more