Samsung announced initial production of its 3nm process node, which uses a gate-all-around (nanosheet) transistor structure that the company calls Multi-Bridge-Channel FET (MBCFET). The first-generation 3nm process can reduce power consumption by up to 45% compared with a 5nm process, as well as improve performance by 23% and reduce area by 16%, according to the company. The second-generation 3...
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