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Expanded Material Metrology For Refined Etch Selectivities


Trends in advanced device fabrication require combined lithography-etching multi-patterning sequences and self-aligned multi-patterning to form devices’ finest features at subwavelength dimensions. As EUV lithography (13.5 nm) progresses to larger numerical apertures and new thin resists, new multipatterning sequences must be developed with mutually compatible resists and proximal layers t... » read more