Progress In The Fabrication Of CMOS Devices Based On Stacked 2D TMD Nanoribbons (Intel)


A technical paper titled “Process integration and future outlook of 2D transistors” was published by researchers at Intel Corporation. Abstract: "The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the r... » read more