Total Overlay With Multiple RDLs


As Advanced IC Substrates (AICS) add more RDL layers, requiring additional via connections between the RDL layers, the potential for cumulative overlay shift increases. This overlay shift can lead to longer RDL traces, which increases interconnect resistance, resulting in lower yield. Keith Best, director of product marketing, for lithography at Onto Innovation, talks about total overlay — th... » read more

Novel Assist Layers To Enhance EUV Lithography Performance Of Photoresists On Different Substrates


In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alt... » read more