Demonstration Of An ALD IWO Channel In A GAA Nanosheet FET Structure (Georgia Tech, Micron)


A new technical paper titled "First Demonstration of High-Performance and Extremely Stable W-Doped In2O3  Gate-All-Around (GAA) Nanosheet FET" was published by researchers at Georgia Institute of Technology and Micron. Abstract "We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-deposited (ALD) tungsten (W)-doped indium oxide (In2O3), or indium tungsten oxide ... » read more

Indium Tungsten Oxide (IWO) Thin-Film Transistors


A new technical paper titled "Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors" was published by researchers at Rochester Institute of Technology and Corning Research and Development Corporation. Abstract "Indium tungsten oxide (IWO) has been investigated as an oxide semiconductor candidate for next-generation thin-film transistors (TFTs). Bottom-gate TFTs we... » read more