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Power/Performance Bits: Jan. 13


Ferroelectric memory Researchers at the Moscow Institute of Physics and Technology and North Carolina State University developed a ferroelectric memory cell and a method for measuring the electric potential distribution across a ferroelectric capacitor, an important aspect of creating new nonvolatile ferroelectric devices. The team's new ferroelectric memory cell is made from a 10nm thick z... » read more

Manufacturing Bits: Sept. 12


Failure analysis for 2.5D/3D chips Imec has developed a new failure analysis method to localize interconnection failures in 2.5D/3D stack die with through-silicon vias (TSVs). This technique is called LICA, which stands for light-induced capacitance alteration. It addresses the reliability issues for 2.5D/3D devices in a non-destructive and cost-effective manner at the wafer level. For s... » read more