A new technical paper titled "Design Technology Co-Optimization and Time-Efficient Verification for Enhanced Pin Accessibility in the Post-3-nm Node" was published by researchers at Samsung Electronics and Kyungpook National University (KNU).
Abstract:
"As the technology nodes approach 3 nm and beyond, nanosheet FETs (NSFETs) are replacing FinFETs. However, despite the migration of devices ...
» read more