Multi-Faceted Spin Orbit Torque Phenomena in GdCo (Berkeley)


A new technical paper titled "Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy" was published by researchers at UC Berkeley and Lawrence Berkeley National Laboratory. The paper states: "Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries g... » read more

Gold Substrate Plays Boosts Performance of Tellurium-Based Memristors


A new technical paper titled "Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold" was published by researchers at Politecnico di Milano, UT Austin, and STMicroelectronics. Abstract: "Two-dimensional (2D) materials are promising for resistive switching in neuromorphic and in-memory computing, as their atomic thickness substantially impr... » read more

HW Implementation of Memristive ANNs


A new technical paper titled "Hardware implementation of memristor-based artificial neural networks" was published by KAUST, Universitat Autònoma de Barcelona, IBM Research, USC, University of Michigan and others. Abstract: "Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units oper... » read more

Heterogeneous Integration of Graphene and Hafnium Oxide Memristors Using Pulsed-Laser Deposition


A technical paper titled “Heterogeneous Integration of Graphene and HfO2 Memristors” was published by researchers at Forschungszentrum Jülich, Jožef Stefan Institute, and Jülich-Aachen Research Alliance (JARA-FIT). Abstract: "The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electro... » read more

Analog Planar Memristor Device: Developing, Designing, and Manufacturing


A new technical paper titled "Analog monolayer SWCNTs-based memristive 2D structure for energy-efficient deep learning in spiking neural networks" was published by researchers at Delft University of Technology and Khalifa University. Abstract: "Advances in materials science and memory devices work in tandem for the evolution of Artificial Intelligence systems. Energy-efficient computation... » read more

Memory Devices-Based Bayesian Neural Networks For Edge AI


A new technical paper titled "Bringing uncertainty quantification to the extreme-edge with memristor-based Bayesian neural networks" was published by researchers at Université Grenoble Alpes, CEA, LETI, and CNRS. Abstract: "Safety-critical sensory applications, like medical diagnosis, demand accurate decisions from limited, noisy data. Bayesian neural networks excel at such tasks, offering... » read more

Neuromorphic Devices Based On Memristive Nanowire Networks


A technical paper titled “Online dynamical learning and sequence memory with neuromorphic nanowire networks” was published by researchers at University of Sydney, University of California Los Angeles (UCLA), National Institute for Materials Science (NIMS), Kyushu Institute of Technology (Kyutech), and University of Sydney Nano Institute. Abstract: "Nanowire Networks (NWNs) belong to an em... » read more

Neuromorphic Computing: Graphene-Based Memristors For Future AI Hardware From Fabrication To SNNs


A technical paper titled “A Review of Graphene-Based Memristive Neuromorphic Devices and Circuits” was published by researchers at James Cook University (Australia) and York University (Canada). Abstract: "As data processing volume increases, the limitations of traditional computers and the need for more efficient computing methods become evident. Neuromorphic computing mimics the brain's... » read more

Research Bits: June 5


Improving memristors Researchers at Los Alamos National Laboratory (LANL) have demonstrated a reliable Interface-type (IT) memristive device (memristor) that shows promise as a technique for building artificial synapses in neuromorphic computing. The team made its memristor — a component that which combines memory and programming functions — using a simple Au/Nb-doped SrTiO3 (Nb:STO) Sc... » read more

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)


A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

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