Review Paper: Negative Capacitance GAA-FET


A new technical paper titled "Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review" by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen Institute of Peking University. "The novel device structure of negative capacitance gate all around field effect transistor (NC GAA-FET) can combine both the advantages of GAA-FET and NC-FET, and ... » read more