Bias- and Temperature-Dependent Noise Measurements to Investigate Carrier Transport at the Tellurium Interface (POSTECH)


A new technical paper, "Revealing and Engineering Contact-Origin Noise in Ultrathin Tellurium Transistors," was published by researchers at Pohang University of Science and Technology. Abstract "Tellurium (Te) has emerged as a promising p-type semiconductor for ultrathin electronics owing to its strong air stability, excellent hole transport, narrow bandgap, and BEOL-integration compatibi... » read more

High Throughput Noise Measurements


Flicker noise and random telegraph noise (RTN) testing can take a long time, especially when measuring down to frequencies of 1 Hz or below. Sweep times up to 30 min at a single temperature are common. And standard data collection for device models requires DUT data at multiple temperatures on small pads. To lower Cost of Test (CoT), and significantly increase on-wafer test throughput, a... » read more