Luminary Panel Sees Progress In EUV Pellicle Adoption As Critical For EUV


A significant focus of the 2024 SPIE Photomask and EUV conference was on EUV lithography and high-numerical-aperture (high-NA) EUV lithography, offering the potential to drive resolution to new heights. These EUV solutions bring new challenges such as pellicles, mask inspection, and smaller and smaller minimum mask dimensions. Progress has been impressive, according to lithography luminary Dr. ... » read more

Luminary Panel Sees Multi-Beam Mask Writers And Curvilinear Masks Key To 193i And EUV


Attendance was up and the mood was optimistic at this year’s SPIE Photomask and EUV conference held September 29 through October 3, 2024. The optimism was apparent as well for multi-beam mask writers and curvilinear masks during the eBeam Initiative’s 15th annual reception and meeting held on October 1. In the eBeam Initiative’s annual Luminaries survey, 93% of those surveyed said that pu... » read more

Overview Of The Current State of the Development Of Curvilinear Masks


A technical paper titled "Curvilinear masks overview: manufacturable mask shapes are more reliably manufacturable" was published by researchers at D2S. The paper covers: The rationale for curvilinear masks The application of the curvilinear inverse lithography technology The state of readiness of the curvilinear mask-making infrastructure, including mask rule checking, metrology, ... » read more

High-NA EUV Lithography: Enhancing Resolution By Split Pupil Exposure (Fraunhofer, ASML)


A new technical paper titled "Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective" was published by researchers at Fraunhofer IISB and ASML. The open source paper published on SPIE states: "The lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffrac... » read more

Semiconductor Photomask Market Poised For Another Year Of Growth


The semiconductor photomask market, a crucial component in chip manufacturing, is on track for another year of robust growth. This growth trajectory is supported by a series of technological advancements and market trends that continue to drive innovation in the industry. As the annual SPIE Photomask Technology Conference approaches in early October in Monterey, California, it presents an oppor... » read more

Bringing Curvilinear Data To Mask Data Prep


Advanced nodes that have been leveraging curvilinear correction with technologies such as ILT and curvilinear OPC are increasingly requiring the use of curvilinear masks to meet advanced feature size and pitch requirements. However, building curvilinear masks with standard OASIS file formats can come at the cost of large file sizes, increased turnaround time, and reduced quality of results. The... » read more

Metrology Analysis Tool For Photolithography Process Characterization At Advanced Nodes


Continued scaling of integrated circuits to smaller dimensions is still a viable way to increase compute power, achieve higher memory cell density, or reduce power consumption. These days, chip makers are using single-digit nanometer figures or even Angstrom to label their manufacturing technology nodes, which are associated with the size of features patterned during the lithography process. ... » read more

European Mask And Lithography Conference 2024 Worth Attending


The European Mask and Lithography Conference (EMLC) 2024 recently was held in Grenoble, France, and had about 190 participants from a wide range of companies and institutions. Being relatively new to the field of lithography (my background is EDA, machine learning, optimization) and not being a fan of gigantic conferences, I thought it would be a good idea to visit this conference. My main p... » read more

CD Spec For Curvilinear Masks


Within the photomask industry, there's a major transformation from conventional Manhattan masks to more advanced curvilinear masks. Researchers from D2S and Micron Technology propose an equivalent CD spec for the curvy masks and use this spec to show that curvy masks have smaller mask variations than Manhattan masks. Find the technical paper here. Published June 2024. Linyong (Leo) Pang, ... » read more

Single Vs. Multi-Patterning Advancements For EUV


As semiconductor devices become more complex, so do the methods for patterning them. Ever-smaller features at each new node require continuous advancements in photolithography techniques and technologies. While the basic lithography process hasn’t changed since the founding of the industry — exposing light through a reticle onto a prepared silicon wafer — the techniques and technology ... » read more

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