Solution To Read Disturbance For Current And Future DRAM Chips at Low Area, Performance And Energy Costs (ETH Zurich et al.)


A new technical paper titled "Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance" was published by researchers at ETH Zurich, TOBB, and University of Sharjah. Abstract "We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Count... » read more

Analysis Of The On-DRAM-Die Read Disturbance Mitigation Method: Per Row Activation Counting


A technical paper titled “Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance” was published by researchers at ETH Zürich and TOBB University of Economics and Technology. Abstract: "We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per... » read more