A new technical paper titled "Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors" was published by researchers at KAIST, NYU, Brookhaven National Laboratory, and National Institute for Materials Science.
Abstract:
"Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantu...
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